IQDH35N03LM5CGATMA1 vs IRFH8318TRPBF Comparison

Detailed side-by-side comparison of IQDH35N03LM5CGATMA1 by Infineon and IRFH8318TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IQDH35N03LM5CGATMA1 IRFH8318TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.45 $0.48
Drain-to-Source Voltage (VDS) 30 V
Continuous Drain Current (ID) at Ta 66 A
Pulsed Drain Current (IDM) at Tc 700 A
Gate-to-Source Voltage (VGS) max ±20 V
Static Drain-to-Source On-Resistance (RDS(on)) 0.35 mΩ (typical at VGS=10 V)
Power Dissipation (PD) at Ta 2.5 W
Power Dissipation (PD) at Tc 278 W
Operating Temperature Range -55 °C to +175 °C
Package PG-TTFN-9-U02 (PQFN 5x6 mm²) PQFN 5x6 (SuperSO8, 8-PowerTDFN)
Mounting Type Surface Mount Surface Mount
MSL Level 1 1
RoHS Status Compliant Compliant
Halogen-Free Yes
Channel Type N-Channel
Technology OptiMOS 5 trench MOSFET StrongIRFET™ (N-Channel Trench MOSFET)
Manufacturer Infineon Technologies
Part Number IRFH8318TRPBF
Drain-Source Voltage (VDS) 30 V
Continuous Drain Current (ID) at Ta=25°C 27 A
Continuous Drain Current (ID) at Tc=25°C 120 A
On-Resistance RDS(on) max at VGS=10V 3.1 mΩ
Total Gate Charge (Qg) 41 nC
Power Dissipation (Ta) 3.6 W
Power Dissipation (Tc) 59 W
Operating Temperature -55°C to +150°C
Lead-Free Yes
Description Synchronous MOSFET for high-frequency buck converters

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