IQDH35N03LM5CGATMA1 vs ISC011N03L5SATMA1 Comparison

Detailed side-by-side comparison of IQDH35N03LM5CGATMA1 by Infineon and ISC011N03L5SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQDH35N03LM5CGATMA1

IQDH35N03LM5CGATMA1 - 30V 700A 0.35mΞ© N-Channel MOSFET | Infineon

IQDH35N03LM5CGATMA1 βœ“ Active
Infineon
ISC011N03L5SATMA1

ISC011N03L5SATMA1 - 30V 100A OptiMOS 5 N-MOSFET | Infineon

ISC011N03L5SATMA1 βœ“ Active

Specification Comparison

Parameter IQDH35N03LM5CGATMA1 ISC011N03L5SATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.45 $0.47
Drain-to-Source Voltage (VDS) 30 V β€”
Continuous Drain Current (ID) at Ta 66 A β€”
Pulsed Drain Current (IDM) at Tc 700 A β€”
Gate-to-Source Voltage (VGS) max Β±20 V β€”
Static Drain-to-Source On-Resistance (RDS(on)) 0.35 mΞ© (typical at VGS=10 V) β€”
Power Dissipation (PD) at Ta 2.5 W β€”
Power Dissipation (PD) at Tc 278 W β€”
Operating Temperature Range -55 Β°C to +175 Β°C β€”
Package PG-TTFN-9-U02 (PQFN 5x6 mmΒ²) PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad)
Mounting Type Surface Mount Surface Mount
MSL Level 1 1 (per JEDEC J-STD-020)
RoHS Status Compliant Compliant
Halogen-Free Yes β€”
Channel Type N-Channel β€”
Technology OptiMOS 5 trench MOSFET OptiMOS 5 trench MOSFET
Manufacturer β€” Infineon Technologies
Series β€” OptiMOS 5 / StrongIRFET 30 V
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (VDS) β€” 30 V
Continuous Drain Current (ID) @ Ta=25C β€” 37 A
Continuous Drain Current (ID) @ Tc=25C β€” 100 A
Power Dissipation (PD) @ Ta=25C β€” 2.5 W
Power Dissipation (PD) @ Tc=25C β€” 96 W
Operating Temperature β€” -55 C to +175 C (TJ)
Gate Drive β€” Logic-level compatible

Datasheets & Resources

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