IQDH35N03LM5SCATMA1 vs IQDH88N06LM5ATMA1 Comparison

Detailed side-by-side comparison of IQDH35N03LM5SCATMA1 by Infineon and IQDH88N06LM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQDH35N03LM5SCATMA1

IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon

IQDH35N03LM5SCATMA1 βœ“ Active
Infineon
IQDH88N06LM5ATMA1

IQDH88N06LM5ATMA1 - 60V 447A 0.86mOhm N-FET | Infineon OptiMOS 5

IQDH88N06LM5ATMA1 βœ“ Active

Specification Comparison

Parameter IQDH35N03LM5SCATMA1 IQDH88N06LM5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.05 $3.05
Manufacturer Infineon Technologies Infineon Technologies
Transistor Type N-Channel MOSFET β€”
Technology OptiMOS 5 (trench, shielded-gate) OptiMOS 5 (trench)
Drain-Source Voltage (VDS) max 30 V β€”
Gate-Source Voltage (VGS) max Β±20 V β€”
Continuous Drain Current (ID) at Ta 66 A β€”
Pulsed Drain Current (IDM) at Tc 700 A β€”
On-State Resistance (RDS(on)) max 0.35 mOhm @ VGS=10V β€”
Power Dissipation (PD) at Ta 2.5 W 3 W
Power Dissipation (PD) at Tc 278 W 333 W
Package PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) PG-TSON-8-9 (PQFN 5x6)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 C to +175 C [DATA_NEEDED: TJ max]
MSL Level 1 (unlimited) [DATA_NEEDED: MSL rating]
RoHS Status Compliant Compliant
Marking IQDH35N03LM5S β€”
FET Type β€” N-Channel
Drain-to-Source Voltage (VDS) β€” 60 V
Gate-to-Source Voltage (VGS) β€” [DATA_NEEDED: VGS max rating]
Drain Current (ID) Continuous at Ta β€” 42 A
Drain Current (ID) Continuous at Tc β€” 447 A
RDS(on) Max at VGS=10V β€” 0.86 mOhm
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical]
Series β€” OptiMOS 5

Datasheets & Resources

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