IQDH35N03LM5SCATMA1 vs IQE022N06LM5CGATMA1 Comparison
Detailed side-by-side comparison of IQDH35N03LM5SCATMA1 by Infineon and IQE022N06LM5CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQDH35N03LM5SCATMA1
IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon
IQDH35N03LM5SCATMA1 β ActiveInfineon
IQE022N06LM5CGATMA1
IQE022N06LM5CGATMA1 - 60V OptiMOS 5 N-Ch MOSFET, 2.2mΞ© | Infineon
IQE022N06LM5CGATMA1 β ActiveSpecification Comparison
| Parameter | IQDH35N03LM5SCATMA1 | IQE022N06LM5CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.05 | $0.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Transistor Type | N-Channel MOSFET | β |
| Technology | OptiMOS 5 (trench, shielded-gate) | N-Channel Power MOSFET (Enhancement Mode) |
| Drain-Source Voltage (VDS) max | 30 V | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Continuous Drain Current (ID) at Ta | 66 A | β |
| Pulsed Drain Current (IDM) at Tc | 700 A | β |
| On-State Resistance (RDS(on)) max | 0.35 mOhm @ VGS=10V | β |
| Power Dissipation (PD) at Ta | 2.5 W | β |
| Power Dissipation (PD) at Tc | 278 W | β |
| Package | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) | PG-TTFN-9-3 (PQFN 3.3x3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +175 C | -55C to +150C |
| MSL Level | 1 (unlimited) | β |
| RoHS Status | Compliant | Compliant |
| Marking | IQDH35N03LM5S | β |
| Part Family | β | OptiMOS 5 |
| Drain-Source Voltage (V_DS) | β | 60 V |
| Continuous Drain Current (I_D) at T_A=25C | β | 24 A |
| Continuous Drain Current (I_D) at T_C=25C | β | 151 A |
| R_DS(on) (typical, V_GS=10V) | β | 2.2 mΞ© |
| Gate-Source Voltage (V_GS) max | β | [DATA_NEEDED: V_GS max rating] |
| Gate Threshold Voltage (V_GS(th)) | β | [DATA_NEEDED: V_GS(th) value] |
| Total Gate Charge (Q_G) | β | [DATA_NEEDED: Q_G value] |
| Power Dissipation (T_A) | β | 2.5 W |
| Power Dissipation (T_C) | β | 100 W |
| Pin Count | β | 9 (with exposed thermal pad) |
| Lead-Free | β | Yes |