IQDH88N06LM5CGSCATMA1 vs BSC0502NSIATMA1 Comparison
Detailed side-by-side comparison of IQDH88N06LM5CGSCATMA1 by Infineon and BSC0502NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQDH88N06LM5CGSCATMA1
IQDH88N06LM5CGSCATMA1 - 60V N-Ch MOSFET 0.86mΞ© | Infineon
IQDH88N06LM5CGSCATMA1 β ActiveInfineon
BSC0502NSIATMA1
BSC0502NSIATMA1 - 30V N-Channel OptiMOS 5 MOSFET 2.3mOhm | Infineon
BSC0502NSIATMA1 β ActiveSpecification Comparison
| Parameter | IQDH88N06LM5CGSCATMA1 | BSC0502NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.31 | $0.85 |
| Transistor Type | N-Channel MOSFET | β |
| Technology | OptiMOS 5 (trench) | OptiMOS 5 (Trench MOSFET) |
| Drain-Source Voltage (V(BR)DSS) | 60 V | β |
| Continuous Drain Current (Ta=25Β°C) | 42 A | β |
| Continuous Drain Current (Tc=25Β°C) | 447 A | β |
| On-Resistance RDS(on) typical @ VGS=10V | 0.86 mΞ© | β |
| Power Dissipation (Ta=25Β°C) | 3 W | β |
| Power Dissipation (Tc=25Β°C) | 333 W | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | β |
| Gate Charge Qg typical | [DATA_NEEDED: Qg typical nC] | β |
| Operating Temperature Range | -55Β°C to +175Β°C (TJ) | -55C to +150C |
| Package | PG-WHTFN-9-U02 (PQFN 5x6) | PG-TDSON-8 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 9 (with exposed pad) | β |
| Cooling | Dual-side cooling capable | β |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| RoHS Status | Compliant | Compliant |
| Polarity | N-Channel | β |
| Configuration | Single | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) Max | β | 30 V |
| Continuous Drain Current (ID) at TC | β | 100 A |
| Continuous Drain Current (ID) at TA | β | 26 A |
| RDS(on) Max at VGS=10V | β | 2.3 mOhm |
| Gate Charge QG (0V to 4.5V) Typ | β | 9.0 nC |
| Output Charge QOSS Typ | β | 13.5 nC |
| Power Dissipation at TA (Ta=25C) | β | 2.5 W |
| Power Dissipation at TC (Tc=25C) | β | 43 W |
| Gate Threshold Voltage VGS(th) Typ | β | [DATA_NEEDED: VGS(th) typical value] |