IQDH88N06LM5CGSCATMA1 vs IQE018N06NM6CGATMA1 Comparison
Detailed side-by-side comparison of IQDH88N06LM5CGSCATMA1 by Infineon and IQE018N06NM6CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQDH88N06LM5CGSCATMA1
IQDH88N06LM5CGSCATMA1 - 60V N-Ch MOSFET 0.86mΞ© | Infineon
IQDH88N06LM5CGSCATMA1 β ActiveInfineon
IQE018N06NM6CGATMA1
IQE018N06NM6CGATMA1 - 60V 178A OptiMOS 6 N-MOSFET | Infineon
IQE018N06NM6CGATMA1 β ActiveSpecification Comparison
| Parameter | IQDH88N06LM5CGSCATMA1 | IQE018N06NM6CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.31 | $1.21 |
| Transistor Type | N-Channel MOSFET | β |
| Technology | OptiMOS 5 (trench) | Trench MOSFET, OptiMOS 6 |
| Drain-Source Voltage (V(BR)DSS) | 60 V | β |
| Continuous Drain Current (Ta=25Β°C) | 42 A | β |
| Continuous Drain Current (Tc=25Β°C) | 447 A | β |
| On-Resistance RDS(on) typical @ VGS=10V | 0.86 mΞ© | β |
| Power Dissipation (Ta=25Β°C) | 3 W | β |
| Power Dissipation (Tc=25Β°C) | 333 W | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | β |
| Gate Charge Qg typical | [DATA_NEEDED: Qg typical nC] | β |
| Operating Temperature Range | -55Β°C to +175Β°C (TJ) | -55C to +175C (junction) |
| Package | PG-WHTFN-9-U02 (PQFN 5x6) | PG-TTFN-9-3 (TOLL/TTFN) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 9 (with exposed pad) | β |
| Cooling | Dual-side cooling capable | β |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| RoHS Status | Compliant | β |
| Polarity | N-Channel | β |
| Configuration | Single | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 6 60V |
| Channel Type | β | N-Channel |
| Drain-Source Voltage (V_DS) | β | 60 V |
| Continuous Drain Current (I_D, Tc) | β | 178 A |
| Continuous Drain Current (I_D, Ta) | β | 25 A |
| R_DS(on) max (V_GS=10 V) | β | 1.8 mΞ© |
| Gate Threshold Voltage (V_GS(th)) | β | 3.3 V (logic-level compatible) |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 125 W |
| RoHS Compliance | β | Compliant |