IQE004NE1LM7CGATMA1 vs ISC0805NLSATMA1 Comparison
Detailed side-by-side comparison of IQE004NE1LM7CGATMA1 by Infineon and ISC0805NLSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE004NE1LM7CGATMA1
IQE004NE1LM7CGATMA1 - 15V OptiMOS 7 0.45mOhm N-FET | Infineon
IQE004NE1LM7CGATMA1 β ActiveInfineon
ISC0805NLSATMA1
ISC0805NLSATMA1 - 100V 71A N-Ch OptiMOS 5 MOSFET | Infineon
ISC0805NLSATMA1 β ActiveSpecification Comparison
| Parameter | IQE004NE1LM7CGATMA1 | ISC0805NLSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.06 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | β |
| Technology | N-Channel Trench Power MOSFET | β |
| Drain-Source Voltage (VDS) | 15 V | 100 V |
| Continuous Drain Current (ID, TA=25C) | 58 A | β |
| Continuous Drain Current (ID, TC=25C) | 379 A | β |
| Power Dissipation (TA=25C) | 2.1 W | β |
| Power Dissipation (TC=25C) | 89 W | β |
| On-Resistance RDS(on) max | 0.45 mOhm at VGS=10 V | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | β |
| Package | PG-TTFN-9-3 (surface mount) | PG-TDSON-8-46 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +150C (junction) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| Packaging | Tape & Reel (CGATMA1 suffix) | β |
| Polarization | N-Channel | β |
| Product Family | β | OptiMOSβ’ 5 |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA=25Β°C | β | 13 A |
| Continuous Drain Current (ID) at TC=25Β°C | β | 71 A |
| Power Dissipation (PD) at TA | β | 2.5 W |
| Power Dissipation (PD) at TC | β | 74 W |
| On-Resistance RDS(on) max at VGS=10V | β | 10.7 mΞ© at 4.5V VGS; [DATA_NEEDED: RDS(on) max at 10V] |
| On-Resistance RDS(on) max at VGS=4.5V | β | 10.7 mΞ© |
| Gate Threshold Voltage VGS(th) typ | β | 2.3 V |
| Gate Charge Qg typ at VGS=4.5V | β | 16 nC |
| Input Capacitance Ciss | β | 2.2 nF |
| Reverse Transfer Capacitance Crss | β | 23 pF |
| Output Capacitance Coss | β | 360 pF |
| Operating Temperature Range | β | -55 Β°C to +150 Β°C |