IQE008N03LM5ATMA1 vs ISC009N06LM5ATMA1 Comparison
Detailed side-by-side comparison of IQE008N03LM5ATMA1 by Infineon and ISC009N06LM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE008N03LM5ATMA1
IQE008N03LM5ATMA1 - 30V 0.85mΞ© OptiMOS 5 N-Ch MOSFET | Infineon
IQE008N03LM5ATMA1 β Active
Specification Comparison
| Parameter | IQE008N03LM5ATMA1 | ISC009N06LM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.94 | $2.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) Max | 30 V | β |
| Continuous Drain Current (ID) at TA=25Β°C | 27 A | β |
| Continuous Drain Current (ID) at TC=25Β°C | 253 A | β |
| On-Resistance RDS(on) Typical | 0.85 mΞ© (at 20 A, VGS=10 V per LCSC datasheet snippet) | β |
| Gate Threshold Voltage (VGS(th)) | 2 V (at 250 Β΅A per LCSC snippet) | β |
| Power Dissipation at TA=25Β°C | 2.1 W | β |
| Power Dissipation at TC=25Β°C | 89 W | β |
| Package | PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down | PG-TSON-8-3 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55Β°C to +150Β°C (typical MOSFET junction rating) | -55 C to +175 C |
| Gate-Source Voltage (VGS) Max | Β±20 V (typical MOSFET rating) | β |
| Technology | OptiMOS 5, Source-Down | OptiMOS 5 60V N-channel trench MOSFET |
| RoHS Status | Compliant (per LCSC listing) | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Series | β | OptiMOS 5 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at Ta | β | 41 A |
| Continuous Drain Current (ID) at Tc | β | 348 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS maximum rating] |
| Gate-Source Threshold (VGS(th)) | β | [DATA_NEEDED: VGS threshold typical] |
| On-Resistance RDS(on) max at VGS=10V | β | 0.9 mOhm |
| Power Dissipation at Ta (PD) | β | 3 W |
| Power Dissipation at Tc (PD) | β | 214 W |