IQE008N03LM5ATMA1 vs ISC011N06LM5ATMA1 Comparison
Detailed side-by-side comparison of IQE008N03LM5ATMA1 by Infineon and ISC011N06LM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE008N03LM5ATMA1
IQE008N03LM5ATMA1 - 30V 0.85mΞ© OptiMOS 5 N-Ch MOSFET | Infineon
IQE008N03LM5ATMA1 β ActiveInfineon
ISC011N06LM5ATMA1
ISC011N06LM5ATMA1 - 60V 1.1mOhm OptiMOS 5 N-MOSFET | Infineon
ISC011N06LM5ATMA1 β ActiveSpecification Comparison
| Parameter | IQE008N03LM5ATMA1 | ISC011N06LM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.94 | $0.74 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | β |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) Max | 30 V | β |
| Continuous Drain Current (ID) at TA=25Β°C | 27 A | β |
| Continuous Drain Current (ID) at TC=25Β°C | 253 A | β |
| On-Resistance RDS(on) Typical | 0.85 mΞ© (at 20 A, VGS=10 V per LCSC datasheet snippet) | β |
| Gate Threshold Voltage (VGS(th)) | 2 V (at 250 Β΅A per LCSC snippet) | [DATA_NEEDED: VGS(th) value] |
| Power Dissipation at TA=25Β°C | 2.1 W | β |
| Power Dissipation at TC=25Β°C | 89 W | β |
| Package | PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down | PG-TDSON-8-17 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55Β°C to +150Β°C (typical MOSFET junction rating) | -55C to +175C |
| Gate-Source Voltage (VGS) Max | Β±20 V (typical MOSFET rating) | β |
| Technology | OptiMOS 5, Source-Down | OptiMOS 5 |
| RoHS Status | Compliant (per LCSC listing) | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL level] |
| Part Number | β | ISC011N06LM5ATMA1 |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at Ta | β | 37 A |
| Continuous Drain Current (ID) at Tc | β | 288 A |
| Power Dissipation (PD) at Ta | β | 3 W |
| Power Dissipation (PD) at Tc | β | 188 W |
| RDS(on) max at VGS=10V | β | 1.15 mOhm |
| Pin Count | β | 8 |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg value] |