IQE008N03LM5SCATMA1 vs IQE220N15NM5CGSCATMA1 Comparison
Detailed side-by-side comparison of IQE008N03LM5SCATMA1 by Infineon and IQE220N15NM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE220N15NM5CGSCATMA1
IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon
IQE220N15NM5CGSCATMA1 β ActiveSpecification Comparison
| Parameter | IQE008N03LM5SCATMA1 | IQE220N15NM5CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.18 | $2.18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | β |
| Technology | Trench MOSFET (N-Channel) | OptiMOS 5, Source-Down |
| Drain-Source Voltage (VDS) | 30 V | 150 V |
| Continuous Drain Current (ID) | 252 A | β |
| On-Resistance (RDS(on)) max | 0.85 mΞ© at VGS = 10 V | β |
| Gate Threshold Voltage (VGS(th)) | 2 V (typical) | 4.6 V |
| Gate Drive Voltage | 10 V (recommended) | β |
| Package | PG-WHSON-8 (Source-Down) | PG-WHTFN-9 (Source-Down) |
| Configuration | Single N-Channel | β |
| Mounting Type | Surface Mount | Surface Mount |
| Cooling Architecture | Source-Down, dual-side cooling | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C | -55C to +150C (junction) |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| RoHS Status | Compliant | Compliant |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Series | β | OptiMOS 5 |
| FET Type | β | N-Channel |
| Continuous Drain Current at Ta (ID) | β | 7 A |
| Continuous Drain Current at Tc (ID) | β | 44 A |
| Power Dissipation at Ta (PD) | β | 2.5 W |
| Power Dissipation at Tc (PD) | β | 100 W |
| On-Resistance (RDS(on)) | β | 22 milliohm (max) |