IQE012N03LM5CGATMA1 vs IQE012N03LM5CGSCATMA1 Comparison
Detailed side-by-side comparison of IQE012N03LM5CGATMA1 by Infineon and IQE012N03LM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE012N03LM5CGATMA1
IQE012N03LM5CGATMA1 - 30V 224A OptiMOS 5 N-FET | Infineon
IQE012N03LM5CGATMA1 β ActiveInfineon
IQE012N03LM5CGSCATMA1
IQE012N03LM5CGSCATMA1 - 30V 1.15mΞ© OptiMOS 5 MOSFET | Infineon
IQE012N03LM5CGSCATMA1 β ActiveSpecification Comparison
| Parameter | IQE012N03LM5CGATMA1 | IQE012N03LM5CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.38 | $1.55 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID, Ta) | 34 A | β |
| Pulsed Drain Current (IDM, Tc) | 224 A | β |
| On-Resistance RDS(on), typ | 1.20 mOhm | β |
| Gate-Source Threshold VGS(th) | 1.0 V to 2.4 V (typ, OptiMOS 5 logic-level) | β |
| Power Dissipation (Ta) | 2.5 W | 2.5 W |
| Power Dissipation (Tc) | 107 W | 107 W |
| Technology / Process | OptiMOS 5 trench | β |
| Package | PG-TTFN-9-3 (PQFN 3.3x3.3 Source-Down, center-gate) | PG-WHTFN-9-1 (PQFN 3.3 Γ 3.3 mm Source-Down dual-side cooled) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55 C to +150 C (TJ) | β |
| Gate Drive (recommended) | 10 V (logic-level compatible) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 (per JEDEC J-STD-020, floor life unlimited) |
| Technology | β | OptiMOS 5 (trench MOSFET) |
| Continuous Drain Current (ID) @ Ta | β | 34 A |
| Continuous Drain Current (ID) @ Tc | β | 224 A |
| Maximum RDS(on) @ VGS=10V | β | 1.15 mΞ© |
| Gate Threshold Voltage (VGS(th)) | β | 2 V (typ, per Merlin listing) |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Lead-Free | β | Yes |