IQE012N03LM5CGATMA1 vs IQE013N04LM6ATMA1 Comparison
Detailed side-by-side comparison of IQE012N03LM5CGATMA1 by Infineon and IQE013N04LM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE012N03LM5CGATMA1
IQE012N03LM5CGATMA1 - 30V 224A OptiMOS 5 N-FET | Infineon
IQE012N03LM5CGATMA1 β ActiveInfineon
IQE013N04LM6ATMA1
IQE013N04LM6ATMA1 - 40V 1.35mΞ© OptiMOS N-FET, PQFN 3.3x3.3 | Infineon
IQE013N04LM6ATMA1 β ActiveSpecification Comparison
| Parameter | IQE012N03LM5CGATMA1 | IQE013N04LM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.38 | $0.71 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | 40 V |
| Continuous Drain Current (ID, Ta) | 34 A | β |
| Pulsed Drain Current (IDM, Tc) | 224 A | β |
| On-Resistance RDS(on), typ | 1.20 mOhm | β |
| Gate-Source Threshold VGS(th) | 1.0 V to 2.4 V (typ, OptiMOS 5 logic-level) | β |
| Power Dissipation (Ta) | 2.5 W | 2.5 W |
| Power Dissipation (Tc) | 107 W | 107 W |
| Technology / Process | OptiMOS 5 trench | β |
| Package | PG-TTFN-9-3 (PQFN 3.3x3.3 Source-Down, center-gate) | PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55 C to +150 C (TJ) | β |
| Gate Drive (recommended) | 10 V (logic-level compatible) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | β |
| Technology | β | OptiMOS N-channel trench MOSFET |
| Polarity | β | N-Channel |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Continuous Drain Current (Ta) | β | 31 A |
| Continuous Drain Current (Tc) | β | 205 A |
| On-Resistance RDS(on) max | β | [DATA_NEEDED: RDS(on) max value at VGS=10V] |
| On-Resistance RDS(on) typ | β | 1.35 mΞ© @ VGS=10 V, ID=20 A |
| Gate Threshold Voltage (VGS(th)) | β | 2 V (typ) |
| Operating Temperature Range | β | -55 Β°C to +175 Β°C |
| Source-Down Topology | β | Yes (flip-chip die attach, drain on top thermal pad) |