IQE012N03LM5CGATMA1 vs IQEH50NE2LM7UCGSCATMA1 Comparison
Detailed side-by-side comparison of IQE012N03LM5CGATMA1 by Infineon and IQEH50NE2LM7UCGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE012N03LM5CGATMA1
IQE012N03LM5CGATMA1 - 30V 224A OptiMOS 5 N-FET | Infineon
IQE012N03LM5CGATMA1 β ActiveInfineon
IQEH50NE2LM7UCGSCATMA1
IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon
IQEH50NE2LM7UCGSCATMA1 β ActiveSpecification Comparison
| Parameter | IQE012N03LM5CGATMA1 | IQEH50NE2LM7UCGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.38 | $1.78 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID, Ta) | 34 A | β |
| Pulsed Drain Current (IDM, Tc) | 224 A | β |
| On-Resistance RDS(on), typ | 1.20 mOhm | β |
| Gate-Source Threshold VGS(th) | 1.0 V to 2.4 V (typ, OptiMOS 5 logic-level) | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 107 W | β |
| Technology / Process | OptiMOS 5 trench | β |
| Package | PG-TTFN-9-3 (PQFN 3.3x3.3 Source-Down, center-gate) | PG-WHTFN-9-1 (surface mount) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55 C to +150 C (TJ) | β |
| Gate Drive (recommended) | 10 V (logic-level compatible) | β |
| RoHS Status | Compliant | β |
| MSL Level | 1 | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 7 Power-Transistor |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | β | 25 V |
| Continuous Drain Current (ID) at TA | β | 54 A |
| Continuous Drain Current (ID) at TC | β | 422 A |
| RDS(on) Max | β | 0.5 mΞ© |
| Gate Threshold Voltage (VGS(th)) typ | β | 2 V |
| Power Dissipation (PD) at TA | β | 2.5 W |
| Power Dissipation (PD) at TC | β | 150 W |
| Maximum Junction Temperature | β | 175 Β°C |
| Series | β | OptiMOS 7 |
| Technology | β | Silicon N-Channel Power MOSFET |