IQE012N03LM5CGSCATMA1 vs IQE012N03LM5CGATMA1 Comparison
Detailed side-by-side comparison of IQE012N03LM5CGSCATMA1 by Infineon and IQE012N03LM5CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE012N03LM5CGSCATMA1 - 30V 1.15mΞ© OptiMOS 5 MOSFET | Infineon
IQE012N03LM5CGSCATMA1 β ActiveSpecification Comparison
| Parameter | IQE012N03LM5CGSCATMA1 | IQE012N03LM5CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.55 | $1.38 |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS 5 (trench MOSFET) | β |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) @ Ta | 34 A | β |
| Continuous Drain Current (ID) @ Tc | 224 A | β |
| Maximum RDS(on) @ VGS=10V | 1.15 mΞ© | β |
| Power Dissipation (Ta) | 2.5 W | 2.5 W |
| Power Dissipation (Tc) | 107 W | 107 W |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ, per Merlin listing) | β |
| Package | PG-WHTFN-9-1 (PQFN 3.3 Γ 3.3 mm Source-Down dual-side cooled) | PG-TTFN-9-3 (PQFN 3.3x3.3 Source-Down, center-gate) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| MSL Level | 1 (per JEDEC J-STD-020, floor life unlimited) | 1 |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Continuous Drain Current (ID, Ta) | β | 34 A |
| Pulsed Drain Current (IDM, Tc) | β | 224 A |
| On-Resistance RDS(on), typ | β | 1.20 mOhm |
| Gate-Source Threshold VGS(th) | β | 1.0 V to 2.4 V (typ, OptiMOS 5 logic-level) |
| Technology / Process | β | OptiMOS 5 trench |
| Operating Temperature | β | -55 C to +150 C (TJ) |
| Gate Drive (recommended) | β | 10 V (logic-level compatible) |