IQE012N03LM5CGSCATMA1 vs ISC015N06NM5LF2ATMA1 Comparison
Detailed side-by-side comparison of IQE012N03LM5CGSCATMA1 by Infineon and ISC015N06NM5LF2ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE012N03LM5CGSCATMA1
IQE012N03LM5CGSCATMA1 - 30V 1.15mΞ© OptiMOS 5 MOSFET | Infineon
IQE012N03LM5CGSCATMA1 β ActiveInfineon
ISC015N06NM5LF2ATMA1
ISC015N06NM5LF2ATMA1 - 60V 1.5mΞ© OptiMOS 5 Linear FET | Infineon
ISC015N06NM5LF2ATMA1 β ActiveSpecification Comparison
| Parameter | IQE012N03LM5CGSCATMA1 | ISC015N06NM5LF2ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.55 | $2.21 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 5 (trench MOSFET) | OptiMOS 5 Linear FET 2 (N-Channel) |
| Drain-Source Voltage (VDS) | 30 V | 60 V |
| Continuous Drain Current (ID) @ Ta | 34 A | β |
| Continuous Drain Current (ID) @ Tc | 224 A | β |
| Maximum RDS(on) @ VGS=10V | 1.15 mΞ© | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 107 W | β |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ, per Merlin listing) | 3 V |
| Package | PG-WHTFN-9-1 (PQFN 3.3 Γ 3.3 mm Source-Down dual-side cooled) | PG-TDSON-8 FL (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | -55 Β°C to +175 Β°C |
| MSL Level | 1 (per JEDEC J-STD-020, floor life unlimited) | β |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | β |
| Continuous Drain Current (ID) at Ta | β | 32 A |
| Pulsed Drain Current (IDM) at Tc | β | 275 A |
| Power Dissipation (PD) at Ta | β | 3 W |
| Power Dissipation (PD) at Tc | β | 217 W |
| On-Resistance RDS(on) max at VGS=10V | β | 1.55 mΞ© |
| On-Resistance RDS(on) at VGS=10V (typ) | β | 1.3 mΞ© |
| Gate-Source Voltage Rating | β | Β±20 V |
| Reverse Recovery Charge (Qrr) | β | 1.3 nC |
| Input Capacitance (Ciss) | β | 6.9 nF |
| Output Capacitance (Coss) | β | 1.3 nF |
| Reverse Transfer Capacitance (Crss) | β | 55 pF |
| Total Gate Charge (Qg) | β | 90 nC |
| RoHS | β | Compliant |