IQE013N04LM6ATMA1 vs IAUA220N08S5N021AUMA1 Comparison
Detailed side-by-side comparison of IQE013N04LM6ATMA1 by Infineon and IAUA220N08S5N021AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE013N04LM6ATMA1
IQE013N04LM6ATMA1 - 40V 1.35mΞ© OptiMOS N-FET, PQFN 3.3x3.3 | Infineon
IQE013N04LM6ATMA1 β ActiveInfineon
IAUA220N08S5N021AUMA1
IAUA220N08S5N021AUMA1 - 80V, 220A OptiMOS-5 N-MOSFET | Infineon
IAUA220N08S5N021AUMA1 β ActiveSpecification Comparison
| Parameter | IQE013N04LM6ATMA1 | IAUA220N08S5N021AUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.71 | $2.45 |
| Technology | OptiMOS N-channel trench MOSFET | OptiMOS-5 (75V-120V family) |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Continuous Drain Current (Ta) | 31 A | β |
| Continuous Drain Current (Tc) | 205 A | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 107 W | β |
| On-Resistance RDS(on) max | [DATA_NEEDED: RDS(on) max value at VGS=10V] | β |
| On-Resistance RDS(on) typ | 1.35 mΞ© @ VGS=10 V, ID=20 A | β |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ) | β |
| Package | PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down | PG-HSOF-5-4 (7x8 mmΒ²) |
| Operating Temperature Range | -55 Β°C to +175 Β°C | -55C to +175C (Tj) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Source-Down Topology | Yes (flip-chip die attach, drain on top thermal pad) | β |
| Drain-Source Voltage (V_DS max) | β | 80 V |
| Continuous Drain Current (I_D, Tj) | β | 220 A |
| Static Drain-Source On-Resistance (R_DS(on)) | β | 2.1 mΞ© at 10 V V_GS |
| Power Dissipation (P_D, Tc) | β | 211 W |
| Gate-Source Voltage (V_GS max) | β | [DATA_NEEDED: V_GS max absolute rating] |
| Gate Threshold Voltage (V_GS(th)) | β | [DATA_NEEDED: V_GS(th) typical/min/max] |
| Channel Type | β | N-Channel |
| Automotive Qualification | β | AEC-Q101 qualified |
| MSL Level | β | [DATA_NEEDED: MSL moisture sensitivity level] |
| Total Gate Charge (Q_g) | β | [DATA_NEEDED: Q_g typical at V_GS=10V] |
| Output Capacitance (C_oss) | β | [DATA_NEEDED: C_oss typical] |
| Thermal Resistance (R_thJC) | β | [DATA_NEEDED: junction-to-case thermal resistance] |