IQE013N04LM6ATMA1 vs IQE065N10NM5CGSCATMA1 Comparison
Detailed side-by-side comparison of IQE013N04LM6ATMA1 by Infineon and IQE065N10NM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE013N04LM6ATMA1
IQE013N04LM6ATMA1 - 40V 1.35mΞ© OptiMOS N-FET, PQFN 3.3x3.3 | Infineon
IQE013N04LM6ATMA1 β ActiveInfineon
IQE065N10NM5CGSCATMA1
IQE065N10NM5CGSCATMA1 - 100V 6.5mOhm N-Ch MOSFET | Infineon
IQE065N10NM5CGSCATMA1 β ActiveSpecification Comparison
| Parameter | IQE013N04LM6ATMA1 | IQE065N10NM5CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.71 | $1.28 |
| Technology | OptiMOS N-channel trench MOSFET | OptiMOS 5 trench-gate |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Continuous Drain Current (Ta) | 31 A | β |
| Continuous Drain Current (Tc) | 205 A | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 107 W | β |
| On-Resistance RDS(on) max | [DATA_NEEDED: RDS(on) max value at VGS=10V] | β |
| On-Resistance RDS(on) typ | 1.35 mΞ© @ VGS=10 V, ID=20 A | β |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ) | [DATA_NEEDED: VGS(th) typical value] |
| Package | PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down | PG-WHTFN-9-1 (Source-Down) |
| Operating Temperature Range | -55 Β°C to +175 Β°C | -55 C to +150 C |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Source-Down Topology | Yes (flip-chip die attach, drain on top thermal pad) | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 5 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at TC=25 C | β | 85 A |
| Continuous Drain Current (ID) at TA | β | 13 A |
| On-Resistance (RDS(on)) max at VGS=10V | β | 6.5 mOhm |
| Power Dissipation at TA | β | 2.5 W |
| Power Dissipation at TC | β | 100 W |
| Lead-Free | β | Yes |