IQE013N04LM6ATMA1 vs IQE220N15NM5ATMA1 Comparison
Detailed side-by-side comparison of IQE013N04LM6ATMA1 by Infineon and IQE220N15NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE013N04LM6ATMA1 - 40V 1.35mΞ© OptiMOS N-FET, PQFN 3.3x3.3 | Infineon
IQE013N04LM6ATMA1 β ActiveSpecification Comparison
| Parameter | IQE013N04LM6ATMA1 | IQE220N15NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.71 | $0.84 |
| Technology | OptiMOS N-channel trench MOSFET | Trench MOSFET (OptiMOS 5) |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Continuous Drain Current (Ta) | 31 A | β |
| Continuous Drain Current (Tc) | 205 A | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 107 W | β |
| On-Resistance RDS(on) max | [DATA_NEEDED: RDS(on) max value at VGS=10V] | β |
| On-Resistance RDS(on) typ | 1.35 mΞ© @ VGS=10 V, ID=20 A | β |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ) | 4.6 V (typ at 46 Β΅A) |
| Package | PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down | PG-TSON-8-5 (Source-Down) |
| Operating Temperature Range | -55 Β°C to +175 Β°C | β |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Source-Down Topology | Yes (flip-chip die attach, drain on top thermal pad) | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 5 Power-Transistor |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) Max | β | 150 V |
| Continuous Drain Current (ID) at Ta | β | 7 A |
| Continuous Drain Current (ID) at Tc | β | 44 A |
| Power Dissipation (PD) at Ta | β | 2.5 W |
| Power Dissipation (PD) at Tc | β | 100 W |
| RDS(on) Max at VGS=10V | β | 22 mΞ© |
| Total Gate Charge (Qg) | β | 14.4 nC at 10 V |
| Input Capacitance (Ciss) | β | 14 pF |
| Output Capacitance (Coss) | β | 340 pF |
| Output Configuration | β | Single N-Channel |
| Operating Temperature | β | -55C to +150C (junction) |
| MSL Level | β | 1 |