IQE013N04LM6ATMA1 vs IQEH68NE2LM7UCGATMA1 Comparison
Detailed side-by-side comparison of IQE013N04LM6ATMA1 by Infineon and IQEH68NE2LM7UCGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE013N04LM6ATMA1
IQE013N04LM6ATMA1 - 40V 1.35mΞ© OptiMOS N-FET, PQFN 3.3x3.3 | Infineon
IQE013N04LM6ATMA1 β ActiveInfineon
IQEH68NE2LM7UCGATMA1
IQEH68NE2LM7UCGATMA1 - 25V OptiMOS 7 N-MOSFET, 338A | Infineon
IQEH68NE2LM7UCGATMA1 β ActiveSpecification Comparison
| Parameter | IQE013N04LM6ATMA1 | IQEH68NE2LM7UCGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.71 | $1.35 |
| Technology | OptiMOS N-channel trench MOSFET | OptiMOS 7 trench MOSFET |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) | 40 V | 25 V |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Continuous Drain Current (Ta) | 31 A | β |
| Continuous Drain Current (Tc) | 205 A | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 107 W | β |
| On-Resistance RDS(on) max | [DATA_NEEDED: RDS(on) max value at VGS=10V] | β |
| On-Resistance RDS(on) typ | 1.35 mΞ© @ VGS=10 V, ID=20 A | β |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ) | β |
| Package | PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down | PG-TTFN-9-3 (surface mount) |
| Operating Temperature Range | -55 Β°C to +175 Β°C | -55 Β°C to +175 Β°C (typical for OptiMOS 7) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant (per distributor listing) |
| Source-Down Topology | Yes (flip-chip die attach, drain on top thermal pad) | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 7 |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) @ Ta | β | 47 A |
| Pulsed Drain Current (IDM) @ Tc | β | 338 A |
| Power Dissipation (PD) @ Ta | β | 2.5 W |
| Power Dissipation (PD) @ Tc | β | 130 W |
| Gate Threshold Voltage Type | β | Logic-level (per OptiMOS 7 family) |
| On-Resistance Family | β | RDS(on)10 / RDS(on)45 (10V and 4.5V rated) |
| Maximum Junction Temperature | β | 175 Β°C |
| MSL Level | β | [DATA_NEEDED: MSL Level] |
| Packaging | β | Tape & Reel (per ATMA1 suffix) |