IQE013N04LM6ATMA1 vs ISK057N04LM6ATSA1 Comparison
Detailed side-by-side comparison of IQE013N04LM6ATMA1 by Infineon and ISK057N04LM6ATSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE013N04LM6ATMA1
IQE013N04LM6ATMA1 - 40V 1.35mΞ© OptiMOS N-FET, PQFN 3.3x3.3 | Infineon
IQE013N04LM6ATMA1 β ActiveInfineon
ISK057N04LM6ATSA1
ISK057N04LM6ATSA1 - 40V 64A OptiMOS 6 N-MOSFET PG-VSON-6-1
ISK057N04LM6ATSA1 β ActiveSpecification Comparison
| Parameter | IQE013N04LM6ATMA1 | ISK057N04LM6ATSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.71 | $0.30 |
| Technology | OptiMOS N-channel trench MOSFET | OptiMOS 6 Trench |
| Polarity | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Continuous Drain Current (Ta) | 31 A | β |
| Continuous Drain Current (Tc) | 205 A | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 107 W | β |
| On-Resistance RDS(on) max | [DATA_NEEDED: RDS(on) max value at VGS=10V] | β |
| On-Resistance RDS(on) typ | 1.35 mΞ© @ VGS=10 V, ID=20 A | β |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ) | 2.3 V (typ) |
| Package | PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down | PG-VSON-6-1 (PQFN 2x2 mm) |
| Operating Temperature Range | -55 Β°C to +175 Β°C | -55C to +150C |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Source-Down Topology | Yes (flip-chip die attach, drain on top thermal pad) | β |
| Gate-Source Voltage (VGS) Max | β | Β±20 V |
| Continuous Drain Current (ID) at Ta=25C | β | 15 A |
| Continuous Drain Current (ID) at Tc=25C | β | 64 A |
| Power Dissipation (PD) at Ta | β | 2.1 W |
| Power Dissipation (PD) at Tc | β | 39.1 W |
| On-Resistance RDS(on) at VGS=10V | β | [DATA_NEEDED: typical RDS(on) at 10V] |
| On-Resistance RDS(on) at VGS=4.5V | β | 8.3 mOhm |
| Total Gate Charge (Qg) at VGS=10V | β | 12 nC |
| Input Capacitance (Ciss) | β | 870 pF |
| Output Capacitance (Coss) | β | 290 pF |
| Reverse Transfer Capacitance (Crss) | β | 21 pF |