IQE018N06NM6CGATMA1 vs IQE022N06LM5CGATMA1 Comparison

Detailed side-by-side comparison of IQE018N06NM6CGATMA1 by Infineon and IQE022N06LM5CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQE018N06NM6CGATMA1

IQE018N06NM6CGATMA1 - 60V 178A OptiMOS 6 N-MOSFET | Infineon

IQE018N06NM6CGATMA1 βœ“ Active
Infineon
IQE022N06LM5CGATMA1

IQE022N06LM5CGATMA1 - 60V OptiMOS 5 N-Ch MOSFET, 2.2mΞ© | Infineon

IQE022N06LM5CGATMA1 βœ“ Active

Specification Comparison

Parameter IQE018N06NM6CGATMA1 IQE022N06LM5CGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.21 $0.78
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 6 60V β€”
Channel Type N-Channel β€”
Drain-Source Voltage (V_DS) 60 V 60 V
Continuous Drain Current (I_D, Tc) 178 A β€”
Continuous Drain Current (I_D, Ta) 25 A β€”
R_DS(on) max (V_GS=10 V) 1.8 mΞ© β€”
Gate Threshold Voltage (V_GS(th)) 3.3 V (logic-level compatible) [DATA_NEEDED: V_GS(th) value]
Power Dissipation (Ta) 2.5 W β€”
Power Dissipation (Tc) 125 W β€”
Package PG-TTFN-9-3 (TOLL/TTFN) PG-TTFN-9-3 (PQFN 3.3x3.3 mm)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +175C (junction) -55C to +150C
Technology Trench MOSFET, OptiMOS 6 N-Channel Power MOSFET (Enhancement Mode)
RoHS Compliance Compliant β€”
Part Family β€” OptiMOS 5
Continuous Drain Current (I_D) at T_A=25C β€” 24 A
Continuous Drain Current (I_D) at T_C=25C β€” 151 A
R_DS(on) (typical, V_GS=10V) β€” 2.2 mΞ©
Gate-Source Voltage (V_GS) max β€” [DATA_NEEDED: V_GS max rating]
Total Gate Charge (Q_G) β€” [DATA_NEEDED: Q_G value]
Power Dissipation (T_A) β€” 2.5 W
Power Dissipation (T_C) β€” 100 W
Pin Count β€” 9 (with exposed thermal pad)
RoHS Status β€” Compliant
Lead-Free β€” Yes

Datasheets & Resources

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