IQE018N06NM6CGATMA1 vs IQE022N06LM5CGSCATMA1 Comparison

Detailed side-by-side comparison of IQE018N06NM6CGATMA1 by Infineon and IQE022N06LM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQE018N06NM6CGATMA1

IQE018N06NM6CGATMA1 - 60V 178A OptiMOS 6 N-MOSFET | Infineon

IQE018N06NM6CGATMA1 βœ“ Active
Infineon
IQE022N06LM5CGSCATMA1

IQE022N06LM5CGSCATMA1 - 60V 151A OptiMOS 5 N-FET | Infineon

IQE022N06LM5CGSCATMA1 βœ“ Active

Specification Comparison

Parameter IQE018N06NM6CGATMA1 IQE022N06LM5CGSCATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.21 $2.05
Manufacturer Infineon Technologies β€”
Product Family OptiMOS 6 60V β€”
Channel Type N-Channel β€”
Drain-Source Voltage (V_DS) 60 V β€”
Continuous Drain Current (I_D, Tc) 178 A β€”
Continuous Drain Current (I_D, Ta) 25 A β€”
R_DS(on) max (V_GS=10 V) 1.8 mΞ© β€”
Gate Threshold Voltage (V_GS(th)) 3.3 V (logic-level compatible) β€”
Power Dissipation (Ta) 2.5 W β€”
Power Dissipation (Tc) 125 W β€”
Package PG-TTFN-9-3 (TOLL/TTFN) PG-WHTFN-9 (5x6 mm)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +175C (junction) -55C to +150C
Technology Trench MOSFET, OptiMOS 6 β€”
RoHS Compliance Compliant β€”
FET Type β€” N-Channel
Drain-Source Voltage (VDS) β€” 60 V
Continuous Drain Current (TC) β€” 151 A
Continuous Drain Current (TA) β€” 24 A
Maximum Power Dissipation (TC) β€” 100 W
Maximum Power Dissipation (TA) β€” 2.5 W
RDS(on) Maximum at VGS=10V β€” 2.2 mOhm
Gate Threshold Voltage (VGS(th)) β€” 2.3 V (typ)
Technology Family β€” OptiMOS 5
Pin Count β€” 9 (PG-WHTFN-9)
MSL Level β€” [DATA_NEEDED: MSL Level]
RoHS Status β€” Compliant

Datasheets & Resources

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