IQE018N06NM6CGATMA1 vs IQE031N08LM6CGSCATMA1 Comparison
Detailed side-by-side comparison of IQE018N06NM6CGATMA1 by Infineon and IQE031N08LM6CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE018N06NM6CGATMA1
IQE018N06NM6CGATMA1 - 60V 178A OptiMOS 6 N-MOSFET | Infineon
IQE018N06NM6CGATMA1 β ActiveInfineon
IQE031N08LM6CGSCATMA1
IQE031N08LM6CGSCATMA1 - 80V OptiMOS 6 N-Ch MOSFET 127A | Infineon
IQE031N08LM6CGSCATMA1 β ActiveSpecification Comparison
| Parameter | IQE018N06NM6CGATMA1 | IQE031N08LM6CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.21 | $0.74 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60V | OptiMOS 6 (40 V to 100 V) |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (V_DS) | 60 V | β |
| Continuous Drain Current (I_D, Tc) | 178 A | β |
| Continuous Drain Current (I_D, Ta) | 25 A | β |
| R_DS(on) max (V_GS=10 V) | 1.8 mΞ© | β |
| Gate Threshold Voltage (V_GS(th)) | 3.3 V (logic-level compatible) | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 125 W | β |
| Package | PG-TTFN-9-3 (TOLL/TTFN) | PG-WHTFN-9 (PQFN 3.3x3.3 Source-Down Center-Gate) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (junction) | -55 C to +175 C (junction, typical for OptiMOS 6) |
| Technology | Trench MOSFET, OptiMOS 6 | β |
| RoHS Compliance | Compliant | β |
| Polarity / Channel Type | β | N-Channel |
| Drain-to-Source Voltage (VDS max) | β | 80 V |
| Continuous Drain Current (ID) at Ta=25C | β | 18 A |
| Continuous Drain Current (ID) at Tc | β | 127 A |
| Power Dissipation (PD) at Ta=25C | β | 2.5 W |
| Power Dissipation (PD) at Tc | β | 125 W |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance RDS(on) max | β | [DATA_NEEDED: RDS(on) at VGS=10 V] |
| Gate Drive Level | β | Logic-level |
| Avalanche Tested | β | 100% avalanche tested |
| MSL Level | β | 1 (per JEDEC J-STD-020, typical for Infineon PQFN) |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes |