IQE018N06NM6SCATMA1 vs ISC015N06NM5ATMA1 Comparison
Detailed side-by-side comparison of IQE018N06NM6SCATMA1 by Infineon and ISC015N06NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE018N06NM6SCATMA1
IQE018N06NM6SCATMA1 - 60V 1.8mΞ© OptiMOS 6 N-MOSFET | Infineon
IQE018N06NM6SCATMA1 β Active
Specification Comparison
| Parameter | IQE018N06NM6SCATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.98 | $0.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 60 V | β |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) Max | 60 V | β |
| Continuous Drain Current (ID) at TA=25Β°C | 25 A | β |
| Continuous Drain Current (ID) at TC | 178 A | β |
| On-Resistance RDS(on) Max | 1.8 mΞ© at VGS=10 V | β |
| Gate Threshold Voltage VGS(th) Typ | 3.3 V | β |
| Power Dissipation (TA) | 2.5 W | β |
| Power Dissipation (TC) | 125 W | β |
| Mounting Type | Surface Mount | Surface Mount |
| Package | PG-WHSON-8-1 (5x6 mm) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Operating Temperature Range | -55 Β°C to +175 Β°C (TJ) | -55 C to +175 C |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Product Family | β | OptiMOS 5 |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at TA=25C | β | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | β | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | β | 1.5 mOhm |
| Total Power Dissipation (TA) | β | 3 W |
| Total Power Dissipation (TC) | β | 188 W |
| Technology | β | Trench MOSFET (OptiMOS 5) |
| MSL (Moisture Sensitivity Level) | β | 1 |