IQE018N06NM6SCATMA1 vs ISZ072N06NM6ATMA1 Comparison
Detailed side-by-side comparison of IQE018N06NM6SCATMA1 by Infineon and ISZ072N06NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE018N06NM6SCATMA1
IQE018N06NM6SCATMA1 - 60V 1.8mΞ© OptiMOS 6 N-MOSFET | Infineon
IQE018N06NM6SCATMA1 β ActiveInfineon
ISZ072N06NM6ATMA1
ISZ072N06NM6ATMA1 - 60V 57A OptiMOS 6 N-MOSFET | Infineon
ISZ072N06NM6ATMA1 β ActiveSpecification Comparison
| Parameter | IQE018N06NM6SCATMA1 | ISZ072N06NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.98 | $0.38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 60 V | β |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) Max | 60 V | β |
| Continuous Drain Current (ID) at TA=25Β°C | 25 A | β |
| Continuous Drain Current (ID) at TC | 178 A | β |
| On-Resistance RDS(on) Max | 1.8 mΞ© at VGS=10 V | β |
| Gate Threshold Voltage VGS(th) Typ | 3.3 V | β |
| Power Dissipation (TA) | 2.5 W | β |
| Power Dissipation (TC) | 125 W | β |
| Mounting Type | Surface Mount | Surface Mount |
| Package | PG-WHSON-8-1 (5x6 mm) | PG-TSDSON-8-34 (TSDSON-8 FL) |
| Operating Temperature Range | -55 Β°C to +175 Β°C (TJ) | -55C to +175C ( Tj max 175C ) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Product Family | β | OptiMOS 6 60V |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 57 A |
| Continuous Drain Current (ID, Ta) | β | 12.7 A |
| RDS(on) max @ VGS=10V | β | 7.2 mΞ© |
| Gate Threshold Voltage (VGS(th)) | β | 3.3 V (typ) |
| Power Dissipation (Tc=25Β°C) | β | 50 W |
| Power Dissipation (Ta) | β | 2.5 W |
| Technology | β | OptiMOS 6 trench MOSFET |
| MSL Level | β | 1 |