IQE020N04LM6CGATMA1 vs IQE004NE1LM7CGATMA1 Comparison
Detailed side-by-side comparison of IQE020N04LM6CGATMA1 by Infineon and IQE004NE1LM7CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE020N04LM6CGATMA1
IQE020N04LM6CGATMA1 - 40V 2.0mΞ© OptiMOS 6 MOSFET | Infineon
IQE020N04LM6CGATMA1 β ActiveInfineon
IQE004NE1LM7CGATMA1
IQE004NE1LM7CGATMA1 - 15V OptiMOS 7 0.45mOhm N-FET | Infineon
IQE004NE1LM7CGATMA1 β ActiveSpecification Comparison
| Parameter | IQE020N04LM6CGATMA1 | IQE004NE1LM7CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.75 | $1.06 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 | OptiMOS 7 |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 40 V | 15 V |
| Continuous Drain Current (ID) at TA=25Β°C | 25 A | β |
| Continuous Drain Current (ID) at TC=25Β°C | 166 A | β |
| Power Dissipation (PD) at TA=25Β°C | 2.5 W | β |
| Power Dissipation (PD) at TC=25Β°C | 107 W | β |
| On-State Resistance (RDS(on)) typical @ VGS=10V | 2.0 mΞ© | β |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | β |
| Gate Charge (Qg) typical | [DATA_NEEDED: Qg value] | β |
| Package | PG-TTFN-9-3 (PQFN 3.3x3.3, source-down center-gate) | PG-TTFN-9-3 (surface mount) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55Β°C to +150Β°C | β |
| Technology | OptiMOS 6, TrenchFET-class | N-Channel Trench Power MOSFET |
| Configuration | Single N-Channel, source-down | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | MSL1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Continuous Drain Current (ID, TA=25C) | β | 58 A |
| Continuous Drain Current (ID, TC=25C) | β | 379 A |
| Power Dissipation (TA=25C) | β | 2.1 W |
| Power Dissipation (TC=25C) | β | 89 W |
| On-Resistance RDS(on) max | β | 0.45 mOhm at VGS=10 V |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: typical VGS(th)] |
| Operating Temperature | β | -55C to +150C (junction) |
| Packaging | β | Tape & Reel (CGATMA1 suffix) |
| Polarization | β | N-Channel |