IQE020N04LM6CGATMA1 vs IQE013N04LM6ATMA1 Comparison
Detailed side-by-side comparison of IQE020N04LM6CGATMA1 by Infineon and IQE013N04LM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE020N04LM6CGATMA1
IQE020N04LM6CGATMA1 - 40V 2.0mΞ© OptiMOS 6 MOSFET | Infineon
IQE020N04LM6CGATMA1 β ActiveInfineon
IQE013N04LM6ATMA1
IQE013N04LM6ATMA1 - 40V 1.35mΞ© OptiMOS N-FET, PQFN 3.3x3.3 | Infineon
IQE013N04LM6ATMA1 β ActiveSpecification Comparison
| Parameter | IQE020N04LM6CGATMA1 | IQE013N04LM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.75 | $0.71 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 6 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TA=25Β°C | 25 A | β |
| Continuous Drain Current (ID) at TC=25Β°C | 166 A | β |
| Power Dissipation (PD) at TA=25Β°C | 2.5 W | β |
| Power Dissipation (PD) at TC=25Β°C | 107 W | β |
| On-State Resistance (RDS(on)) typical @ VGS=10V | 2.0 mΞ© | β |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | β |
| Gate Charge (Qg) typical | [DATA_NEEDED: Qg value] | β |
| Package | PG-TTFN-9-3 (PQFN 3.3x3.3, source-down center-gate) | PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55Β°C to +150Β°C | -55 Β°C to +175 Β°C |
| Technology | OptiMOS 6, TrenchFET-class | OptiMOS N-channel trench MOSFET |
| Configuration | Single N-Channel, source-down | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | MSL1 (per JEDEC J-STD-020) | β |
| Polarity | β | N-Channel |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Continuous Drain Current (Ta) | β | 31 A |
| Continuous Drain Current (Tc) | β | 205 A |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 107 W |
| On-Resistance RDS(on) max | β | [DATA_NEEDED: RDS(on) max value at VGS=10V] |
| On-Resistance RDS(on) typ | β | 1.35 mΞ© @ VGS=10 V, ID=20 A |
| Gate Threshold Voltage (VGS(th)) | β | 2 V (typ) |
| Source-Down Topology | β | Yes (flip-chip die attach, drain on top thermal pad) |