IQE020N04LM6CGATMA1 vs IQE036N08NM6CGSCATMA1 Comparison
Detailed side-by-side comparison of IQE020N04LM6CGATMA1 by Infineon and IQE036N08NM6CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE020N04LM6CGATMA1
IQE020N04LM6CGATMA1 - 40V 2.0mΞ© OptiMOS 6 MOSFET | Infineon
IQE020N04LM6CGATMA1 β ActiveInfineon
IQE036N08NM6CGSCATMA1
IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGSCATMA1 β ActiveSpecification Comparison
| Parameter | IQE020N04LM6CGATMA1 | IQE036N08NM6CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.75 | $0.88 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 | OptiMOS 6 |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 40 V | 80 V |
| Continuous Drain Current (ID) at TA=25Β°C | 25 A | β |
| Continuous Drain Current (ID) at TC=25Β°C | 166 A | β |
| Power Dissipation (PD) at TA=25Β°C | 2.5 W | β |
| Power Dissipation (PD) at TC=25Β°C | 107 W | β |
| On-State Resistance (RDS(on)) typical @ VGS=10V | 2.0 mΞ© | β |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | β |
| Gate Charge (Qg) typical | [DATA_NEEDED: Qg value] | β |
| Package | PG-TTFN-9-3 (PQFN 3.3x3.3, source-down center-gate) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55Β°C to +150Β°C | -55 C to +150 C (junction, per datasheet derating curves) |
| Technology | OptiMOS 6, TrenchFET-class | Trench MOSFET (OptiMOS 6) |
| Configuration | Single N-Channel, source-down | Source Down, Center Gate, Dual-Side Cooling |
| RoHS Status | Compliant | Compliant |
| MSL Level | MSL1 (per JEDEC J-STD-020) | β |
| Part Status | β | Active |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at TA | β | 16.7 A |
| Continuous Drain Current (ID) at TC | β | 118 A |
| Power Dissipation (PD) at TA | β | 2.5 W |
| Power Dissipation (PD) at TC | β | 125 W |
| Package / Case | β | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm) |
| Packing | β | Tape and Reel (suffix ATMA1) |
| Voltage Rating | β | 60 V to 100 V category (80 V nominal) |