IQE022N06LM5CGSCATMA1 vs ISC015N06NM5ATMA1 Comparison
Detailed side-by-side comparison of IQE022N06LM5CGSCATMA1 by Infineon and ISC015N06NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE022N06LM5CGSCATMA1
IQE022N06LM5CGSCATMA1 - 60V 151A OptiMOS 5 N-FET | Infineon
IQE022N06LM5CGSCATMA1 β Active
Specification Comparison
| Parameter | IQE022N06LM5CGSCATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.05 | $0.62 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (TC) | 151 A | β |
| Continuous Drain Current (TA) | 24 A | β |
| Maximum Power Dissipation (TC) | 100 W | β |
| Maximum Power Dissipation (TA) | 2.5 W | β |
| RDS(on) Maximum at VGS=10V | 2.2 mOhm | β |
| Gate Threshold Voltage (VGS(th)) | 2.3 V (typ) | β |
| Package | PG-WHTFN-9 (5x6 mm) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +150C | -55 C to +175 C |
| Technology Family | OptiMOS 5 | β |
| Pin Count | 9 (PG-WHTFN-9) | β |
| MSL Level | [DATA_NEEDED: MSL Level] | β |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 5 |
| Polarity / Channel Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at TA=25C | β | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | β | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | β | 1.5 mOhm |
| Total Power Dissipation (TA) | β | 3 W |
| Total Power Dissipation (TC) | β | 188 W |
| Technology | β | Trench MOSFET (OptiMOS 5) |
| MSL (Moisture Sensitivity Level) | β | 1 |