IQE031N08LM6CGSCATMA1 vs ISC151N08NM6ATMA1 Comparison
Detailed side-by-side comparison of IQE031N08LM6CGSCATMA1 by Infineon and ISC151N08NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE031N08LM6CGSCATMA1
IQE031N08LM6CGSCATMA1 - 80V OptiMOS 6 N-Ch MOSFET 127A | Infineon
IQE031N08LM6CGSCATMA1 β ActiveInfineon
ISC151N08NM6ATMA1
ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8
ISC151N08NM6ATMA1 β ActiveSpecification Comparison
| Parameter | IQE031N08LM6CGSCATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.74 | $0.78 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 6 (40 V to 100 V) | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-to-Source Voltage (VDS max) | 80 V | β |
| Continuous Drain Current (ID) at Ta=25C | 18 A | β |
| Continuous Drain Current (ID) at Tc | 127 A | β |
| Power Dissipation (PD) at Ta=25C | 2.5 W | β |
| Power Dissipation (PD) at Tc | 125 W | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | β |
| On-State Resistance RDS(on) max | [DATA_NEEDED: RDS(on) at VGS=10 V] | β |
| Gate Drive Level | Logic-level | β |
| Package | PG-WHTFN-9 (PQFN 3.3x3.3 Source-Down Center-Gate) | PG-TDSON-8 FL |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +175 C (junction, typical for OptiMOS 6) | β |
| Avalanche Tested | 100% avalanche tested | β |
| MSL Level | 1 (per JEDEC J-STD-020, typical for Infineon PQFN) | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (TA=25Β°C) | β | 9.2 A |
| Continuous Drain Current (TC=25Β°C) | β | 37 A |
| Power Dissipation (TA) | β | 3 W |
| Power Dissipation (TC) | β | 48 W |
| On-Resistance RDS(on) max | β | 15.1 mΞ© |
| Gate Threshold Voltage VGS(th) typ | β | 3.5 V |
| Technology | β | OptiMOS 6 |
| Number of Pins | β | 8 |
| Channel Mode | β | Enhancement |
| Operating Temperature | β | -55 Β°C to +175 Β°C |