IQE036N08NM6CGATMA1 vs IAUCN08S7N036TATMA1 Comparison
Detailed side-by-side comparison of IQE036N08NM6CGATMA1 by Infineon and IAUCN08S7N036TATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE036N08NM6CGATMA1
IQE036N08NM6CGATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGATMA1 β ActiveInfineon
IAUCN08S7N036TATMA1
IAUCN08S7N036TATMA1 - 80V, 3.6mΞ© OptiMOS 7 Auto MOSFET | Infineon
IAUCN08S7N036TATMA1 β ActiveSpecification Comparison
| Parameter | IQE036N08NM6CGATMA1 | IAUCN08S7N036TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $2.05 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | OptiMOS 7 |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (Vds) | 80 V | β |
| Gate-Source Voltage (Vgs) | [DATA_NEEDED: Vgs max] | β |
| Continuous Drain Current (Id) at Tc | 118 A | β |
| Continuous Drain Current (Id) at Ta | 16.7 A | β |
| Rds(on) max at Vgs=10V | 3.6 mOhm | β |
| Gate Threshold Voltage (Vgs(th)) | 3.5 V (max) | β |
| Power Dissipation at Tc | 125 W | β |
| Power Dissipation at Ta | 2.5 W | β |
| Operating Temperature Range | -55 C to +175 C (junction, Tj) | β |
| Package | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) | PG-LHDSO-10-1 (SSO10T, 5x7 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (per JEDEC J-STD-020) | β |
| RoHS Status | Compliant | Compliant |
| Technology | Trench MOSFET, OptiMOS 6 | β |
| Configuration | Single N-channel, Source-Down | β |
| Polarity | β | N-Channel |
| Drain-Source Voltage (V_DS) | β | 80 V |
| Gate-Source Voltage (V_GS) | β | Β±20 V |
| Continuous Drain Current (I_D) | β | 129 A |
| R_DS(on) max @ V_GS=10V | β | 3.60 mΞ© |
| Power Dissipation (P_D) | β | 118 W (T_C = 25 Β°C) |
| Input Capacitance (C_iss) | β | 3120 pF (typ) |
| Output Capacitance (C_oss) | β | 1280 pF (typ) |
| Reverse Transfer Capacitance (C_rss) | β | 23 pF (max) |
| Turn-on Delay Time (t_d(on)) | β | 14 ns (typ) |
| Rise Time (t_r) | β | 8 ns (typ) |
| Turn-off Delay Time (t_d(off)) | β | 17 ns (typ) |
| Fall Time (t_f) | β | 8 ns (typ) |
| Cooling | β | Top-side cooled |
| Automotive Qualification | β | AEC-Q101 |