IQE036N08NM6CGATMA1 vs IQD009N06NM5SCATMA1 Comparison
Detailed side-by-side comparison of IQE036N08NM6CGATMA1 by Infineon and IQD009N06NM5SCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE036N08NM6CGATMA1
IQE036N08NM6CGATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGATMA1 β ActiveInfineon
IQD009N06NM5SCATMA1
IQD009N06NM5SCATMA1 - 60V 0.9mOhm N-Ch MOSFET | Infineon
IQD009N06NM5SCATMA1 β ActiveSpecification Comparison
| Parameter | IQE036N08NM6CGATMA1 | IQD009N06NM5SCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $1.42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (Vds) | 80 V | β |
| Gate-Source Voltage (Vgs) | [DATA_NEEDED: Vgs max] | β |
| Continuous Drain Current (Id) at Tc | 118 A | β |
| Continuous Drain Current (Id) at Ta | 16.7 A | β |
| Rds(on) max at Vgs=10V | 3.6 mOhm | β |
| Gate Threshold Voltage (Vgs(th)) | 3.5 V (max) | β |
| Power Dissipation at Tc | 125 W | β |
| Power Dissipation at Ta | 2.5 W | β |
| Operating Temperature Range | -55 C to +175 C (junction, Tj) | [DATA_NEEDED: Tj min/max] |
| Package | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) | PG-WHSON-8-U02 (PQFN 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL classification] |
| RoHS Status | Compliant | Compliant |
| Technology | Trench MOSFET, OptiMOS 6 | β |
| Configuration | Single N-channel, Source-Down | β |
| Part Series | β | OptiMOS 5 60V (IQD009N06NM5) |
| Polarity / Channel Type | β | N-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID, Ta=25C) | β | 42 A |
| Pulsed Drain Current (IDM, Tc) | β | 445 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 0.9 mOhm |
| Power Dissipation (Ta) | β | 3 W |
| Power Dissipation (Tc) | β | 333 W |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS abs max, typical +/-20V] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: typical VGS(th) value] |
| Tape and Reel Packaging | β | Yes (suffix SCATMA1) |