IQE036N08NM6CGATMA1 vs IQD020N10NM5CGATMA1 Comparison

Detailed side-by-side comparison of IQE036N08NM6CGATMA1 by Infineon and IQD020N10NM5CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQE036N08NM6CGATMA1 IQE036N08NM6CGATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon

IQE036N08NM6CGATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon

IQE036N08NM6CGATMA1 ✓ Active

Specification Comparison

Parameter IQE036N08NM6CGATMA1 IQD020N10NM5CGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.82 $1.28
Manufacturer Infineon Technologies
Product Family OptiMOS 6
Transistor Type N-Channel MOSFET
Drain-Source Voltage (Vds) 80 V
Gate-Source Voltage (Vgs) [DATA_NEEDED: Vgs max]
Continuous Drain Current (Id) at Tc 118 A
Continuous Drain Current (Id) at Ta 16.7 A
Rds(on) max at Vgs=10V 3.6 mOhm
Gate Threshold Voltage (Vgs(th)) 3.5 V (max)
Power Dissipation at Tc 125 W
Power Dissipation at Ta 2.5 W
Operating Temperature Range -55 C to +175 C (junction, Tj) -55°C to +175°C
Package PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) PG-TTFN-9-U02 (PQFN 5x6 mm²)
Mounting Type Surface Mount Surface Mount
MSL Level MSL1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating from datasheet]
RoHS Status Compliant Compliant
Technology Trench MOSFET, OptiMOS 6 OptiMOS™ 5 N-channel trench MOSFET
Configuration Single N-channel, Source-Down
Drain-Source Voltage (VDS) 100 V
Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TA=25°C 26 A
Continuous Drain Current (ID) at TC=25°C [DATA_NEEDED: ID at TC=25°C from datasheet curve]
Pulsed Drain Current (IDM) at TC=25°C 273 A
Static Drain-Source On-Resistance RDS(on) max 2.0 mΩ (at VGS=10V)
Power Dissipation (TA) 3 W
Power Dissipation (TC) 333 W
Qualification Industrial grade (Infineon OptiMOS™ 5 family)

Datasheets & Resources

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