IQE036N08NM6CGATMA1 vs IQE036N08NM6ATMA1 Comparison
Detailed side-by-side comparison of IQE036N08NM6CGATMA1 by Infineon and IQE036N08NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE036N08NM6CGATMA1
IQE036N08NM6CGATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGATMA1 β ActiveInfineon
IQE036N08NM6ATMA1
IQE036N08NM6ATMA1 - 80V OptiMOS 6 N-MOSFET, 3.6mΞ© | Infineon
IQE036N08NM6ATMA1 β ActiveSpecification Comparison
| Parameter | IQE036N08NM6CGATMA1 | IQE036N08NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $0.92 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | OptiMOS 6 |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (Vds) | 80 V | β |
| Gate-Source Voltage (Vgs) | [DATA_NEEDED: Vgs max] | β |
| Continuous Drain Current (Id) at Tc | 118 A | β |
| Continuous Drain Current (Id) at Ta | 16.7 A | β |
| Rds(on) max at Vgs=10V | 3.6 mOhm | β |
| Gate Threshold Voltage (Vgs(th)) | 3.5 V (max) | β |
| Power Dissipation at Tc | 125 W | 125 W |
| Power Dissipation at Ta | 2.5 W | 2.5 W |
| Operating Temperature Range | -55 C to +175 C (junction, Tj) | -55Β°C to +150Β°C (junction, per datasheet) |
| Package | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) | PG-TSON-8-5 (PQFN 3.3x3.3 Source-Down) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (per JEDEC J-STD-020) | MSL1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Technology | Trench MOSFET, OptiMOS 6 | β |
| Configuration | Single N-channel, Source-Down | β |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (ID) at Ta | β | 16.7 A |
| Continuous Drain Current (ID) at Tc | β | 118 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | β | [DATA_NEEDED: RDS(on) at VGS=10V] |
| On-Resistance RDS(on) typical | β | 3.6 mΞ© |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: VGS(th) typical] |
| Avalanche Energy Rated | β | Yes (single-pulse, per datasheet) |