IQE036N08NM6CGSCATMA1 vs IQE008N03LM5ATMA1 Comparison
Detailed side-by-side comparison of IQE036N08NM6CGSCATMA1 by Infineon and IQE008N03LM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE036N08NM6CGSCATMA1
IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGSCATMA1 β ActiveInfineon
IQE008N03LM5ATMA1
IQE008N03LM5ATMA1 - 30V 0.85mΞ© OptiMOS 5 N-Ch MOSFET | Infineon
IQE008N03LM5ATMA1 β ActiveSpecification Comparison
| Parameter | IQE036N08NM6CGSCATMA1 | IQE008N03LM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.88 | $0.94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 | β |
| Part Status | Active | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID) at TA | 16.7 A | β |
| Continuous Drain Current (ID) at TC | 118 A | β |
| Power Dissipation (PD) at TA | 2.5 W | β |
| Power Dissipation (PD) at TC | 125 W | β |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm) | β |
| Technology | Trench MOSFET (OptiMOS 6) | OptiMOS 5, Source-Down |
| Configuration | Source Down, Center Gate, Dual-Side Cooling | β |
| Operating Temperature Range | -55 C to +150 C (junction, per datasheet derating curves) | -55Β°C to +150Β°C (typical MOSFET junction rating) |
| Packing | Tape and Reel (suffix ATMA1) | β |
| Voltage Rating | 60 V to 100 V category (80 V nominal) | β |
| RoHS Status | Compliant | Compliant (per LCSC listing) |
| Product Family | β | OptiMOS 5 |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) Max | β | 30 V |
| Continuous Drain Current (ID) at TA=25Β°C | β | 27 A |
| Continuous Drain Current (ID) at TC=25Β°C | β | 253 A |
| On-Resistance RDS(on) Typical | β | 0.85 mΞ© (at 20 A, VGS=10 V per LCSC datasheet snippet) |
| Gate Threshold Voltage (VGS(th)) | β | 2 V (at 250 Β΅A per LCSC snippet) |
| Power Dissipation at TA=25Β°C | β | 2.1 W |
| Power Dissipation at TC=25Β°C | β | 89 W |
| Package | β | PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down |
| Gate-Source Voltage (VGS) Max | β | Β±20 V (typical MOSFET rating) |
| MSL Level | β | [DATA_NEEDED: MSL level] |