IQE036N08NM6CGSCATMA1 vs IQE012N03LM5CGATMA1 Comparison
Detailed side-by-side comparison of IQE036N08NM6CGSCATMA1 by Infineon and IQE012N03LM5CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE036N08NM6CGSCATMA1
IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGSCATMA1 β ActiveInfineon
IQE012N03LM5CGATMA1
IQE012N03LM5CGATMA1 - 30V 224A OptiMOS 5 N-FET | Infineon
IQE012N03LM5CGATMA1 β ActiveSpecification Comparison
| Parameter | IQE036N08NM6CGSCATMA1 | IQE012N03LM5CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.88 | $1.38 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 6 | β |
| Part Status | Active | β |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 80 V | 30 V |
| Continuous Drain Current (ID) at TA | 16.7 A | β |
| Continuous Drain Current (ID) at TC | 118 A | β |
| Power Dissipation (PD) at TA | 2.5 W | β |
| Power Dissipation (PD) at TC | 125 W | β |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm) | β |
| Technology | Trench MOSFET (OptiMOS 6) | β |
| Configuration | Source Down, Center Gate, Dual-Side Cooling | β |
| Operating Temperature Range | -55 C to +150 C (junction, per datasheet derating curves) | β |
| Packing | Tape and Reel (suffix ATMA1) | β |
| Voltage Rating | 60 V to 100 V category (80 V nominal) | β |
| RoHS Status | Compliant | Compliant |
| Continuous Drain Current (ID, Ta) | β | 34 A |
| Pulsed Drain Current (IDM, Tc) | β | 224 A |
| On-Resistance RDS(on), typ | β | 1.20 mOhm |
| Gate-Source Threshold VGS(th) | β | 1.0 V to 2.4 V (typ, OptiMOS 5 logic-level) |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 107 W |
| Technology / Process | β | OptiMOS 5 trench |
| Package | β | PG-TTFN-9-3 (PQFN 3.3x3.3 Source-Down, center-gate) |
| Operating Temperature | β | -55 C to +150 C (TJ) |
| Gate Drive (recommended) | β | 10 V (logic-level compatible) |
| MSL Level | β | 1 |