IQE036N08NM6CGSCATMA1 vs IQE020N04LM6CGATMA1 Comparison
Detailed side-by-side comparison of IQE036N08NM6CGSCATMA1 by Infineon and IQE020N04LM6CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE036N08NM6CGSCATMA1
IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGSCATMA1 β ActiveInfineon
IQE020N04LM6CGATMA1
IQE020N04LM6CGATMA1 - 40V 2.0mΞ© OptiMOS 6 MOSFET | Infineon
IQE020N04LM6CGATMA1 β ActiveSpecification Comparison
| Parameter | IQE036N08NM6CGSCATMA1 | IQE020N04LM6CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.88 | $1.75 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 | OptiMOS 6 |
| Part Status | Active | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 80 V | 40 V |
| Continuous Drain Current (ID) at TA | 16.7 A | β |
| Continuous Drain Current (ID) at TC | 118 A | β |
| Power Dissipation (PD) at TA | 2.5 W | β |
| Power Dissipation (PD) at TC | 125 W | β |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm) | β |
| Technology | Trench MOSFET (OptiMOS 6) | OptiMOS 6, TrenchFET-class |
| Configuration | Source Down, Center Gate, Dual-Side Cooling | Single N-Channel, source-down |
| Operating Temperature Range | -55 C to +150 C (junction, per datasheet derating curves) | -55Β°C to +150Β°C |
| Packing | Tape and Reel (suffix ATMA1) | β |
| Voltage Rating | 60 V to 100 V category (80 V nominal) | β |
| RoHS Status | Compliant | Compliant |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA=25Β°C | β | 25 A |
| Continuous Drain Current (ID) at TC=25Β°C | β | 166 A |
| Power Dissipation (PD) at TA=25Β°C | β | 2.5 W |
| Power Dissipation (PD) at TC=25Β°C | β | 107 W |
| On-State Resistance (RDS(on)) typical @ VGS=10V | β | 2.0 mΞ© |
| Gate-Source Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) value] |
| Gate Charge (Qg) typical | β | [DATA_NEEDED: Qg value] |
| Package | β | PG-TTFN-9-3 (PQFN 3.3x3.3, source-down center-gate) |
| MSL Level | β | MSL1 (per JEDEC J-STD-020) |