IQE036N08NM6CGSCATMA1 vs IQE036N08NM6CGATMA1 Comparison
Detailed side-by-side comparison of IQE036N08NM6CGSCATMA1 by Infineon and IQE036N08NM6CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE036N08NM6CGSCATMA1
IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGSCATMA1 β ActiveInfineon
IQE036N08NM6CGATMA1
IQE036N08NM6CGATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGATMA1 β ActiveSpecification Comparison
| Parameter | IQE036N08NM6CGSCATMA1 | IQE036N08NM6CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.88 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 | β |
| Part Status | Active | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID) at TA | 16.7 A | β |
| Continuous Drain Current (ID) at TC | 118 A | β |
| Power Dissipation (PD) at TA | 2.5 W | β |
| Power Dissipation (PD) at TC | 125 W | β |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm) | β |
| Technology | Trench MOSFET (OptiMOS 6) | Trench MOSFET, OptiMOS 6 |
| Configuration | Source Down, Center Gate, Dual-Side Cooling | Single N-channel, Source-Down |
| Operating Temperature Range | -55 C to +150 C (junction, per datasheet derating curves) | -55 C to +175 C (junction, Tj) |
| Packing | Tape and Reel (suffix ATMA1) | β |
| Voltage Rating | 60 V to 100 V category (80 V nominal) | β |
| RoHS Status | Compliant | Compliant |
| Product Family | β | OptiMOS 6 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | β | 80 V |
| Gate-Source Voltage (Vgs) | β | [DATA_NEEDED: Vgs max] |
| Continuous Drain Current (Id) at Tc | β | 118 A |
| Continuous Drain Current (Id) at Ta | β | 16.7 A |
| Rds(on) max at Vgs=10V | β | 3.6 mOhm |
| Gate Threshold Voltage (Vgs(th)) | β | 3.5 V (max) |
| Power Dissipation at Tc | β | 125 W |
| Power Dissipation at Ta | β | 2.5 W |
| Package | β | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) |
| MSL Level | β | MSL1 (per JEDEC J-STD-020) |