IQE036N08NM6CGSCATMA1 vs IQE220N15NM5CGSCATMA1 Comparison

Detailed side-by-side comparison of IQE036N08NM6CGSCATMA1 by Infineon and IQE220N15NM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQE036N08NM6CGSCATMA1

IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon

IQE036N08NM6CGSCATMA1 βœ“ Active
Infineon
IQE220N15NM5CGSCATMA1

IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon

IQE220N15NM5CGSCATMA1 βœ“ Active

Specification Comparison

Parameter IQE036N08NM6CGSCATMA1 IQE220N15NM5CGSCATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.88 $2.18
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 6 OptiMOS 5
Part Status Active β€”
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 80 V 150 V
Continuous Drain Current (ID) at TA 16.7 A β€”
Continuous Drain Current (ID) at TC 118 A β€”
Power Dissipation (PD) at TA 2.5 W β€”
Power Dissipation (PD) at TC 125 W β€”
Mounting Type Surface Mount Surface Mount
Package / Case PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm) β€”
Technology Trench MOSFET (OptiMOS 6) OptiMOS 5, Source-Down
Configuration Source Down, Center Gate, Dual-Side Cooling β€”
Operating Temperature Range -55 C to +150 C (junction, per datasheet derating curves) -55C to +150C (junction)
Packing Tape and Reel (suffix ATMA1) β€”
Voltage Rating 60 V to 100 V category (80 V nominal) β€”
RoHS Status Compliant Compliant
Continuous Drain Current at Ta (ID) β€” 7 A
Continuous Drain Current at Tc (ID) β€” 44 A
Power Dissipation at Ta (PD) β€” 2.5 W
Power Dissipation at Tc (PD) β€” 100 W
On-Resistance (RDS(on)) β€” 22 milliohm (max)
Gate Threshold Voltage (VGS(th)) β€” 4.6 V
Package β€” PG-WHTFN-9 (Source-Down)

Datasheets & Resources

Browse All Products Create BOM Request Quote