IQE050N08NM5CGATMA1 vs IQD016N08NM5ATMA1 Comparison
Detailed side-by-side comparison of IQE050N08NM5CGATMA1 by Infineon and IQD016N08NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE050N08NM5CGATMA1
IQE050N08NM5CGATMA1 - 80V N-Ch MOSFET 5mΞ© Source-Down | Infineon
IQE050N08NM5CGATMA1 β ActiveInfineon
IQD016N08NM5ATMA1
IQD016N08NM5ATMA1 - 80V 1.6mΞ© OptiMOS 5 N-MOSFET | Infineon
IQD016N08NM5ATMA1 β ActiveSpecification Comparison
| Parameter | IQE050N08NM5CGATMA1 | IQD016N08NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.75 | $1.68 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current (Ta) | 16 A | 31 A |
| Continuous Drain Current (Tc) | 101 A | 323 A |
| On-Resistance RDS(on) Max | 5.0 mΞ© | β |
| Power Dissipation (Ta) | 2.5 W | 3 W |
| Power Dissipation (Tc) | 100 W | 333 W |
| Package | PG-TTFN-9-1 (Surface Mount) | PG-TSON-8-9 (PQFN 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (Source-Down) | OptiMOS 5 Power-MOSFET |
| Gate Threshold Vgs(th) Typ | [DATA_NEEDED: Vgs(th) typical value] | β |
| Operating Temperature | -55Β°C to +175Β°C (TJ max) | β |
| Total Gate Charge Qg Typ | [DATA_NEEDED: total gate charge Qg typical] | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 5 |
| Polarity / Channel Type | β | N-Channel |
| On-Resistance RDS(on) typical | β | 1.6 mΞ© |
| Operating Temperature Range | β | -55C to +150C (junction, standard MOSFET rating) |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge Qg | β | [DATA_NEEDED: Qg typical] |