IQE050N08NM5CGATMA1 vs IQE022N06LM5CGSCATMA1 Comparison
Detailed side-by-side comparison of IQE050N08NM5CGATMA1 by Infineon and IQE022N06LM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE050N08NM5CGATMA1
IQE050N08NM5CGATMA1 - 80V N-Ch MOSFET 5mΞ© Source-Down | Infineon
IQE050N08NM5CGATMA1 β ActiveInfineon
IQE022N06LM5CGSCATMA1
IQE022N06LM5CGSCATMA1 - 60V 151A OptiMOS 5 N-FET | Infineon
IQE022N06LM5CGSCATMA1 β ActiveSpecification Comparison
| Parameter | IQE050N08NM5CGATMA1 | IQE022N06LM5CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.75 | $2.05 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 80 V | 60 V |
| Continuous Drain Current (Ta) | 16 A | β |
| Continuous Drain Current (Tc) | 101 A | β |
| On-Resistance RDS(on) Max | 5.0 mΞ© | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 100 W | β |
| Package | PG-TTFN-9-1 (Surface Mount) | PG-WHTFN-9 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (Source-Down) | β |
| Gate Threshold Vgs(th) Typ | [DATA_NEEDED: Vgs(th) typical value] | β |
| Operating Temperature | -55Β°C to +175Β°C (TJ max) | β |
| Total Gate Charge Qg Typ | [DATA_NEEDED: total gate charge Qg typical] | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL Level] |
| Continuous Drain Current (TC) | β | 151 A |
| Continuous Drain Current (TA) | β | 24 A |
| Maximum Power Dissipation (TC) | β | 100 W |
| Maximum Power Dissipation (TA) | β | 2.5 W |
| RDS(on) Maximum at VGS=10V | β | 2.2 mOhm |
| Gate Threshold Voltage (VGS(th)) | β | 2.3 V (typ) |
| Operating Temperature Range | β | -55C to +150C |
| Technology Family | β | OptiMOS 5 |
| Pin Count | β | 9 (PG-WHTFN-9) |