IQE050N08NM5CGATMA1 vs IQE036N08NM6CGATMA1 Comparison
Detailed side-by-side comparison of IQE050N08NM5CGATMA1 by Infineon and IQE036N08NM6CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE050N08NM5CGATMA1
IQE050N08NM5CGATMA1 - 80V N-Ch MOSFET 5mΞ© Source-Down | Infineon
IQE050N08NM5CGATMA1 β ActiveInfineon
IQE036N08NM6CGATMA1
IQE036N08NM6CGATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGATMA1 β ActiveSpecification Comparison
| Parameter | IQE050N08NM5CGATMA1 | IQE036N08NM6CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.75 | $0.82 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (Ta) | 16 A | β |
| Continuous Drain Current (Tc) | 101 A | β |
| On-Resistance RDS(on) Max | 5.0 mΞ© | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 100 W | β |
| Package | PG-TTFN-9-1 (Surface Mount) | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (Source-Down) | Trench MOSFET, OptiMOS 6 |
| Gate Threshold Vgs(th) Typ | [DATA_NEEDED: Vgs(th) typical value] | β |
| Operating Temperature | -55Β°C to +175Β°C (TJ max) | β |
| Total Gate Charge Qg Typ | [DATA_NEEDED: total gate charge Qg typical] | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | MSL1 (per JEDEC J-STD-020) |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 6 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | β | 80 V |
| Gate-Source Voltage (Vgs) | β | [DATA_NEEDED: Vgs max] |
| Continuous Drain Current (Id) at Tc | β | 118 A |
| Continuous Drain Current (Id) at Ta | β | 16.7 A |
| Rds(on) max at Vgs=10V | β | 3.6 mOhm |
| Gate Threshold Voltage (Vgs(th)) | β | 3.5 V (max) |
| Power Dissipation at Tc | β | 125 W |
| Power Dissipation at Ta | β | 2.5 W |
| Operating Temperature Range | β | -55 C to +175 C (junction, Tj) |
| Configuration | β | Single N-channel, Source-Down |