IQE065N10NM5CGSCATMA1 vs IQE008N03LM5SCATMA1 Comparison
Detailed side-by-side comparison of IQE065N10NM5CGSCATMA1 by Infineon and IQE008N03LM5SCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE065N10NM5CGSCATMA1
IQE065N10NM5CGSCATMA1 - 100V 6.5mOhm N-Ch MOSFET | Infineon
IQE065N10NM5CGSCATMA1 β ActiveSpecification Comparison
| Parameter | IQE065N10NM5CGSCATMA1 | IQE008N03LM5SCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.28 | $1.18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-to-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at TC=25 C | 85 A | β |
| Continuous Drain Current (ID) at TA | 13 A | β |
| On-Resistance (RDS(on)) max at VGS=10V | 6.5 mOhm | β |
| Power Dissipation at TA | 2.5 W | β |
| Power Dissipation at TC | 100 W | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | 2 V (typical) |
| Package | PG-WHTFN-9-1 (Source-Down) | PG-WHSON-8 (Source-Down) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench-gate | Trench MOSFET (N-Channel) |
| Operating Temperature Range | -55 C to +150 C | -55 Β°C to +150 Β°C |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Product Family | β | OptiMOS 5 |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) | β | 252 A |
| On-Resistance (RDS(on)) max | β | 0.85 mΞ© at VGS = 10 V |
| Gate Drive Voltage | β | 10 V (recommended) |
| Configuration | β | Single N-Channel |
| Cooling Architecture | β | Source-Down, dual-side cooling |
| MSL Level | β | [DATA_NEEDED: MSL rating] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss] |