IQE065N10NM5CGSCATMA1 vs IQE012N03LM5CGSCATMA1 Comparison

Detailed side-by-side comparison of IQE065N10NM5CGSCATMA1 by Infineon and IQE012N03LM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQE065N10NM5CGSCATMA1

IQE065N10NM5CGSCATMA1 - 100V 6.5mOhm N-Ch MOSFET | Infineon

IQE065N10NM5CGSCATMA1 βœ“ Active
Infineon
IQE012N03LM5CGSCATMA1

IQE012N03LM5CGSCATMA1 - 30V 1.15mΞ© OptiMOS 5 MOSFET | Infineon

IQE012N03LM5CGSCATMA1 βœ“ Active

Specification Comparison

Parameter IQE065N10NM5CGSCATMA1 IQE012N03LM5CGSCATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.28 $1.55
Manufacturer Infineon Technologies β€”
Series OptiMOS 5 β€”
Transistor Type N-Channel MOSFET β€”
Drain-to-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID) at TC=25 C 85 A β€”
Continuous Drain Current (ID) at TA 13 A β€”
On-Resistance (RDS(on)) max at VGS=10V 6.5 mOhm β€”
Power Dissipation at TA 2.5 W β€”
Power Dissipation at TC 100 W β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] 2 V (typ, per Merlin listing)
Package PG-WHTFN-9-1 (Source-Down) PG-WHTFN-9-1 (PQFN 3.3 Γ— 3.3 mm Source-Down dual-side cooled)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 5 trench-gate OptiMOS 5 (trench MOSFET)
Operating Temperature Range -55 C to +150 C β€”
RoHS Status Compliant Compliant
Lead-Free Yes Yes
FET Type β€” N-Channel
Drain-Source Voltage (VDS) β€” 30 V
Continuous Drain Current (ID) @ Ta β€” 34 A
Continuous Drain Current (ID) @ Tc β€” 224 A
Maximum RDS(on) @ VGS=10V β€” 1.15 mΞ©
Power Dissipation (Ta) β€” 2.5 W
Power Dissipation (Tc) β€” 107 W
Operating Junction Temperature β€” -55 Β°C to +175 Β°C
MSL Level β€” 1 (per JEDEC J-STD-020, floor life unlimited)

Datasheets & Resources

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