IQE065N10NM5CGSCATMA1 vs IQE013N04LM6ATMA1 Comparison
Detailed side-by-side comparison of IQE065N10NM5CGSCATMA1 by Infineon and IQE013N04LM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE065N10NM5CGSCATMA1
IQE065N10NM5CGSCATMA1 - 100V 6.5mOhm N-Ch MOSFET | Infineon
IQE065N10NM5CGSCATMA1 β ActiveInfineon
IQE013N04LM6ATMA1
IQE013N04LM6ATMA1 - 40V 1.35mΞ© OptiMOS N-FET, PQFN 3.3x3.3 | Infineon
IQE013N04LM6ATMA1 β ActiveSpecification Comparison
| Parameter | IQE065N10NM5CGSCATMA1 | IQE013N04LM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.28 | $0.71 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 5 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-to-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at TC=25 C | 85 A | β |
| Continuous Drain Current (ID) at TA | 13 A | β |
| On-Resistance (RDS(on)) max at VGS=10V | 6.5 mOhm | β |
| Power Dissipation at TA | 2.5 W | β |
| Power Dissipation at TC | 100 W | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | 2 V (typ) |
| Package | PG-WHTFN-9-1 (Source-Down) | PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench-gate | OptiMOS N-channel trench MOSFET |
| Operating Temperature Range | -55 C to +150 C | -55 Β°C to +175 Β°C |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Polarity | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 40 V |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Continuous Drain Current (Ta) | β | 31 A |
| Continuous Drain Current (Tc) | β | 205 A |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 107 W |
| On-Resistance RDS(on) max | β | [DATA_NEEDED: RDS(on) max value at VGS=10V] |
| On-Resistance RDS(on) typ | β | 1.35 mΞ© @ VGS=10 V, ID=20 A |
| Source-Down Topology | β | Yes (flip-chip die attach, drain on top thermal pad) |