IQE065N10NM5CGSCATMA1 vs IQE036N08NM6CGSCATMA1 Comparison

Detailed side-by-side comparison of IQE065N10NM5CGSCATMA1 by Infineon and IQE036N08NM6CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQE065N10NM5CGSCATMA1

IQE065N10NM5CGSCATMA1 - 100V 6.5mOhm N-Ch MOSFET | Infineon

IQE065N10NM5CGSCATMA1 βœ“ Active
Infineon
IQE036N08NM6CGSCATMA1

IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon

IQE036N08NM6CGSCATMA1 βœ“ Active

Specification Comparison

Parameter IQE065N10NM5CGSCATMA1 IQE036N08NM6CGSCATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.28 $0.88
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 OptiMOS 6
Transistor Type N-Channel MOSFET β€”
Drain-to-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID) at TC=25 C 85 A β€”
Continuous Drain Current (ID) at TA 13 A 16.7 A
On-Resistance (RDS(on)) max at VGS=10V 6.5 mOhm β€”
Power Dissipation at TA 2.5 W β€”
Power Dissipation at TC 100 W β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] β€”
Package PG-WHTFN-9-1 (Source-Down) β€”
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 5 trench-gate Trench MOSFET (OptiMOS 6)
Operating Temperature Range -55 C to +150 C -55 C to +150 C (junction, per datasheet derating curves)
RoHS Status Compliant Compliant
Lead-Free Yes β€”
Part Status β€” Active
FET Type β€” N-Channel
Drain-Source Voltage (VDS) β€” 80 V
Continuous Drain Current (ID) at TC β€” 118 A
Power Dissipation (PD) at TA β€” 2.5 W
Power Dissipation (PD) at TC β€” 125 W
Package / Case β€” PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm)
Configuration β€” Source Down, Center Gate, Dual-Side Cooling
Packing β€” Tape and Reel (suffix ATMA1)
Voltage Rating β€” 60 V to 100 V category (80 V nominal)

Datasheets & Resources

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