IQE065N10NM5CGSCATMA1 vs IQE050N08NM5CGATMA1 Comparison

Detailed side-by-side comparison of IQE065N10NM5CGSCATMA1 by Infineon and IQE050N08NM5CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQE065N10NM5CGSCATMA1

IQE065N10NM5CGSCATMA1 - 100V 6.5mOhm N-Ch MOSFET | Infineon

IQE065N10NM5CGSCATMA1 βœ“ Active
Infineon
IQE050N08NM5CGATMA1

IQE050N08NM5CGATMA1 - 80V N-Ch MOSFET 5mΞ© Source-Down | Infineon

IQE050N08NM5CGATMA1 βœ“ Active

Specification Comparison

Parameter IQE065N10NM5CGSCATMA1 IQE050N08NM5CGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.28 $1.75
Manufacturer Infineon Technologies β€”
Series OptiMOS 5 β€”
Transistor Type N-Channel MOSFET β€”
Drain-to-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID) at TC=25 C 85 A β€”
Continuous Drain Current (ID) at TA 13 A β€”
On-Resistance (RDS(on)) max at VGS=10V 6.5 mOhm β€”
Power Dissipation at TA 2.5 W β€”
Power Dissipation at TC 100 W β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] β€”
Package PG-WHTFN-9-1 (Source-Down) PG-TTFN-9-1 (Surface Mount)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 5 trench-gate OptiMOS 5 (Source-Down)
Operating Temperature Range -55 C to +150 C β€”
RoHS Status Compliant Compliant
Lead-Free Yes β€”
FET Type β€” N-Channel
Drain-Source Voltage (VDS) β€” 80 V
Continuous Drain Current (Ta) β€” 16 A
Continuous Drain Current (Tc) β€” 101 A
On-Resistance RDS(on) Max β€” 5.0 mΞ©
Power Dissipation (Ta) β€” 2.5 W
Power Dissipation (Tc) β€” 100 W
Gate Threshold Vgs(th) Typ β€” [DATA_NEEDED: Vgs(th) typical value]
Operating Temperature β€” -55Β°C to +175Β°C (TJ max)
Total Gate Charge Qg Typ β€” [DATA_NEEDED: total gate charge Qg typical]
MSL Level β€” [DATA_NEEDED: MSL rating]

Datasheets & Resources

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