IQE065N10NM5CGSCATMA1 vs IQE220N15NM5CGATMA1 Comparison

Detailed side-by-side comparison of IQE065N10NM5CGSCATMA1 by Infineon and IQE220N15NM5CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQE065N10NM5CGSCATMA1

IQE065N10NM5CGSCATMA1 - 100V 6.5mOhm N-Ch MOSFET | Infineon

IQE065N10NM5CGSCATMA1 βœ“ Active
Infineon
IQE220N15NM5CGATMA1

IQE220N15NM5CGATMA1 - 150V 44A N-Ch OptiMOS 5 MOSFET | Infineon

IQE220N15NM5CGATMA1 βœ“ Active

Specification Comparison

Parameter IQE065N10NM5CGSCATMA1 IQE220N15NM5CGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.28 $1.55
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 β€”
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-to-Source Voltage (VDS) 100 V 150 V
Continuous Drain Current (ID) at TC=25 C 85 A β€”
Continuous Drain Current (ID) at TA 13 A β€”
On-Resistance (RDS(on)) max at VGS=10V 6.5 mOhm β€”
Power Dissipation at TA 2.5 W β€”
Power Dissipation at TC 100 W β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] β€”
Package PG-WHTFN-9-1 (Source-Down) PG-TTFN-9-3 (Source-Down)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 5 trench-gate Trench MOSFET, OptiMOS 5
Operating Temperature Range -55 C to +150 C -55C to +175C (estimated from Tj max)
RoHS Status Compliant Compliant
Lead-Free Yes β€”
Product Series β€” OptiMOS 5
Continuous Drain Current (ID) at Tc β€” 44 A
Continuous Drain Current (ID) at Ta β€” [DATA_NEEDED: ID at Ta]
On-State Resistance RDS(on) max β€” 22 mOhm
Power Dissipation (Ta) β€” 2.5 W
Power Dissipation (Tc) β€” 100 W
Gate Threshold Voltage VGS(th) typ β€” [DATA_NEEDED: VGS(th) typical value]
MSL Level β€” 1 (per JEDEC J-STD-020)
Pin Count β€” 9 (TTFN)

Datasheets & Resources

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