IQE220N15NM5ATMA1 vs IPTC054N15NM5ATMA1 Comparison
Detailed side-by-side comparison of IQE220N15NM5ATMA1 by Infineon and IPTC054N15NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE220N15NM5ATMA1
IQE220N15NM5ATMA1 - 150V N-Ch OptiMOS 5 MOSFET | Infineon
IQE220N15NM5ATMA1 β ActiveInfineon
IPTC054N15NM5ATMA1 - 150V 143A 5.4mΞ© OptiMOS 5 MOSFET | Infineon
IPTC054N15NM5ATMA1 β ActiveSpecification Comparison
| Parameter | IQE220N15NM5ATMA1 | IPTC054N15NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.84 | $1.52 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 Power-Transistor | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) Max | 150 V | β |
| Continuous Drain Current (ID) at Ta | 7 A | β |
| Continuous Drain Current (ID) at Tc | 44 A | β |
| Power Dissipation (PD) at Ta | 2.5 W | β |
| Power Dissipation (PD) at Tc | 100 W | β |
| RDS(on) Max at VGS=10V | 22 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | 4.6 V (typ at 46 Β΅A) | [DATA_NEEDED: typical VGS(th) value] |
| Total Gate Charge (Qg) | 14.4 nC at 10 V | β |
| Input Capacitance (Ciss) | 14 pF | β |
| Output Capacitance (Coss) | 340 pF | β |
| Output Configuration | Single N-Channel | β |
| Package | PG-TSON-8-5 (Source-Down) | PG-HDSOP-16-2 (16-pin top-cooled) |
| Mounting Type | Surface Mount | Surface Mount (top-side cooled) |
| Operating Temperature | -55C to +150C (junction) | β |
| Technology | Trench MOSFET (OptiMOS 5) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | [DATA_NEEDED: MSL rating] |
| Series | β | OptiMOS 5 (IPT family) |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 150 V |
| Continuous Drain Current (ID) at TA=25Β°C | β | 17.5 A |
| Continuous Drain Current (ID) at TC=25Β°C | β | 143 A |
| Power Dissipation (PD) at TA=25Β°C | β | 3.8 W |
| Power Dissipation (PD) at TC=25Β°C | β | 250 W |
| On-Resistance RDS(on) at VGS=10V, ID=50A | β | 5.4 mΞ© |
| Gate-Source Voltage (VGS) max | β | 20 V |
| Total Gate Charge (Qg) typical | β | 58 nC |
| Forward Body Diode Voltage (VSD) | β | 0.83 V |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Lead-Free | β | Yes |