IQE220N15NM5CGSCATMA1 vs IPT017N12NM6ATMA1 Comparison
Detailed side-by-side comparison of IQE220N15NM5CGSCATMA1 by Infineon and IPT017N12NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE220N15NM5CGSCATMA1
IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon
IQE220N15NM5CGSCATMA1 β ActiveInfineon
IPT017N12NM6ATMA1
IPT017N12NM6ATMA1 - 120V 331A OptiMOS 6 N-MOSFET | Infineon
IPT017N12NM6ATMA1 β ActiveSpecification Comparison
| Parameter | IQE220N15NM5CGSCATMA1 | IPT017N12NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.18 | $1.85 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 150 V | 120 V |
| Continuous Drain Current at Ta (ID) | 7 A | β |
| Continuous Drain Current at Tc (ID) | 44 A | β |
| Power Dissipation at Ta (PD) | 2.5 W | β |
| Power Dissipation at Tc (PD) | 100 W | β |
| On-Resistance (RDS(on)) | 22 milliohm (max) | β |
| Gate Threshold Voltage (VGS(th)) | 4.6 V | β |
| Package | PG-WHTFN-9 (Source-Down) | PG-HSOF-8 (TOLL) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5, Source-Down | OptiMOS 6 |
| Operating Temperature Range | -55C to +150C (junction) | β |
| RoHS Status | Compliant | Compliant |
| Part Number | β | IPT017N12NM6ATMA1 |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | β | 29 A |
| Continuous Drain Current (ID) at Tc | β | 331 A |
| On-Resistance RDS(on) max | β | 1.7 mOhm |
| Power Dissipation at Ta | β | 3 W |
| Power Dissipation at Tc | β | 395 W |
| Operating Temperature | β | -55C to +175C |
| Pin Count | β | 8 + tab |
| Packaging | β | Tape & Reel |